DATA SHEET

The information in this document is subject to change without notice. Before using this document, please

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Document No. P10938EJ2V0DS00 (2nd edition)

Date Published August 2001 NS CP(K)

NPN SILICON RF TRANSISTOR

NE856M02 / 2SC5336

NPN SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

4-PIN POWER MINIMOLD

The mark

•

•

•

• shows major revised points.

FEATURES

• 4-pin power minimold package with improved gain from the

NE85634 / 2SC3357

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

NE856M02-AZ

2SC5336

-AZ

25 pcs (Non reel)

• Magazine case

NE856M02-AZ

2SC5336-T

1-AZ

1 kpcs/reel

• 12 mm wide embossed taping

• Collector face the perforation side of the tape

Remark

To order evaluation samples,

please contact your nearby sales office.

Unit sample quantity is 25 pcs.

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

20

V

Collector to Emitter Voltage

12

V

Emitter to Base Voltage

3.0

V

Collector Current

100

mA

Total Power Dissipation

1.2

W

Junction Temperature

150

°C

Storage Temperature

−65 to +150

°C

Note

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

JEITA

Part No.