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2SC5336 датащи(PDF) 3 Page - California Eastern Labs

номер детали 2SC5336
подробное описание детали  NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
PDF  7 Pages
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производитель  CEL [California Eastern Labs]
домашняя страница  http://www.cel.com
Logo CEL - California Eastern Labs

2SC5336 датащи(HTML) 3 Page - California Eastern Labs

  2SC5336 Datasheet HTML 1Page - California Eastern Labs 2SC5336 Datasheet HTML 2Page - California Eastern Labs 2SC5336 Datasheet HTML 3Page - California Eastern Labs 2SC5336 Datasheet HTML 4Page - California Eastern Labs 2SC5336 Datasheet HTML 5Page - California Eastern Labs 2SC5336 Datasheet HTML 6Page - California Eastern Labs 2SC5336 Datasheet HTML 7Page - California Eastern Labs  
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Data Sheet P10938EJ2V0DS
3
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°°°C)
Mounted on Ceramic Substrate
(16 cm2 × 0.7 mm (t) )
2.0
1.0
0
50
100
150
Ambient Temperature TA (°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
VCE = 10 V
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
100
20
50
10
10
0.5
1
5
50
f = 1 MHz
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
5.0
2.0
3.0
0.3
1.0
0.5
1
3
5
10
20 30
VCE = 10 V
f = 1 GHz
Collector Current IC (mA)
vs. COLLECTOR CURRENT
INSERTION POWER GAIN
15
10
5
0
1
3
5
10
20 30 50
100
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
2
3
5
0.3
0.5
1
20
30 50
1
3
5
10
VCE = 10 V
f = 1 GHz
VCE = 10 V
IC = 20 mA
Frequency f (GHz)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
20
10
0
0.2
0.4
0.6 0.8 1.0 1.4 2.0
MAG
|S21e|2
NE856M02 / 2SC5336



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