HIP0061AS2 datasheet(3/9 Pages) INTERSIL

номер детали	HIP0061AS2

подробное описание детали	60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array

PDF	9 Pages

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производитель	INTERSIL [Intersil Corporation]

домашняя страница	http://www.intersil.com/cda/home

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Short-Circuit Input Capacitance,

Common Source

CISS

VDS = 25V, VGS = 0V

f = 1MHz

142

Short-Circuit Output Capacitance,

Common Source

COSS

107

Short-Circuit Reverse Transfer

Capacitance, Common Source

CRSS

-24

Source-Drain Diode Ratings and Speciﬁcations

PARAMETERS

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Diode Forward Voltage (Note 5)

VSD

ISD = 2A, VGS = 0V

0.9

1.1

Reverse Recovery Time

trr

ISD = 2A, dISD/dt = 100A/µs

NOTES:

5. Pulse test: Pulse width

≤ 300µs, duty cycle ≤ 2%.

6. Independent of operating temperature.

Typical Performance Curves

FIGURE 1A. 25oC SAFE-OPERATING AREA CURVE

FIGURE 1B. 105oC SAFE-OPERATING AREA CURVE

FIGURE 1C. 125oC SAFE-OPERATING AREA CURVE

FIGURE 2. UNCLAMPED INDUCTIVE-SWITCHING

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed (Continued)

PARAMETERS

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

0.1

100

VDS, DRAIN VOLTAGE (V)

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(ON)

µs

100

µs

1ms

TC = 25

TJ = MAX RATED

10ms

100ms

0.1

100

VDS, DRAIN TO SOURCE VOLTAGE (V)

µs

100

µs

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(ON)

1ms

100

µs

TC = 105

TJ = MAX RATED

10ms

100ms

0.1

VDS, DRAIN TO SOURCE VOLTAGE (V)

µs

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(ON)

100

10ms

1ms

100

µs

100ms

TC = 125

TJ = MAX RATED

tAV , TIME IN AVALANCHE (ms)

0.01

1.0

0.1

0.001

STARTING TJ = 125

STARTING TJ = 25

HIP0061

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