HIP0061AS2 datasheet(2/9 Pages) INTERSIL

2 / 9 page

Absolute Maximum Ratings TA =25oC

Thermal Information

Drain to Source Voltage, VDS

(Over Operating Junction and Case Temperature Range) . . . . 60V

Drain to Gate Voltage, VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

Gate to Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . .-15, +20V

Pulsed Drain Current, IDM, Each Output,

All Outputs on at VGS = 10V (Notes 1, 2) . . . . . . . . . . . . . . . . 10A

Continuous Source to Drain Diode Current, ISD

at VGS = 10V (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5A

Continuous Drain Current, IDS, Each Output,

All Outputs on at VGS = 10V (Note 2) . . . . . . . . . . . . . . . . . . 3.5A

Single Pulse Avalanche Energy, EAS (Note 3) . . . . . . . . . . . . 100mJ

Operating Conditions

Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 125oC

Drain to Source On-State Voltage Range . . . . . . . . . . . . 5V to 10V

Thermal Resistance (Typical, Note 4)

θJA (oC/W) θJC (oC/W)

SIP-Vertical Package . . . . . . . . . . . . .

SIP-Gullwing Package . . . . . . . . . . . .

Maximum Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . 150

Maximum Storage Temperature Range, TSTG . . . . -55

oC to 150oC

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC

Die Characteristics

Back Side Potential . . . . . . . . . . . . . . . . . . . . . . . . . V- (Source, Tab)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTES:

1. Pulse width limited by maximum junction temperature.

2. Drain current limited by package construction.

3. VDD = 25V, Start TJ = 25

oC, L = 15mH, R

GS = 50Ω, IPEAK = 3.5A. See Figures 1, 2, 12, and 13.

θJA is measured with the component mounted on an evaluation PC board in free air.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETERS

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 100µA, VGS = 0V

TC = -40

oC to

125oC

TC = 25

oC-

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA

1.8

2.3

2.7

Zero Gate Voltage Drain Current

IDSS

VDS = 60V

VGS = 0V

TC = 25

oC-

µA

TC = 125

oC-

µA

Forward Gate Current, Drain Short

Circuited to Source

IGSSF

VDS = 0V, VGS = 20V

100

Reverse Gate Current, Drain Short

Circuited to Source

IGSSR

VDS = 0V, VGS = -15V

-100

Drain to Source On Resistance (Note 5)

rDS(ON)

VGS = 10V, ID = 3.5A

TC = 25

0.215

0.265

Ω

VGS = 10V, ID = 3.5A

TC = 125

0.365

0.425

Ω

VGS = 5V, ID = 2A

TC = 25

0.275

0.320

Ω

VGS = 5V, ID = 2A

TC = 125

0.465

0.5

Ω

Drain to Source On Resistance Matching

rDS(ON)

VGS = 10V, ID = 3.5A

TC = 25

oC-

Forward Transconductance (Note 5)

gfs

VDS = 10V, ID = 1A

2.5

Turn-On Delay Time (Note 6)

td(ON)

VDD = 30V, RL = 15Ω,

VGS = +10V, ID = 2A, RG = 50Ω

See Figure 14

-10

Rise Time (Note 6)

-25

Turn-Off Delay Time (Note 6)

td(OFF)

-18

Fall Time (Note 6)

-12-

Total Gate Charge (Note 6)

Qg(TOT)

VDS = 50V, VGS = 10V, ID = 2A

See Figures 16, 17

8.0

9.5

Gate-Source Charge (Note 6)

Qgs

0.7

1.0

Gate-Drain Charge (Note 6)

Qgd

3.5

4.0

HIP0061

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