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ADE7166 датащи(PDF) 110 Page - Analog Devices |
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ADE7166 датащи(HTML) 110 Page - Analog Devices |
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110 / 152 page ![]() ADE7116/ADE7156/ADE7166/ADE7169/ADE7566/ADE7569 Rev. B | Page 110 of 1 52 EADRH FLSHKY EADRL ADDRESS ADDRESS DECODER FLSHKY = 0 × 3B? PROTECTION DECODER ECON COMMAND ACCESS ALLOWED? FLASH PROTECTION KEY TRUE: ACCESS ALLOWED ECON = 0 FALSE: ACCESS DENIED ECON = 1 Figure 95. Flash Memory Read/Write/Erase Protection Block Diagram ECON—Flash Control SFR Programming flash memory is done through the Flash Control SFR (ECON, Address 0xB9). This SFR allows the user to read, write, erase, or verify the 16 kB of flash memory. As a method of security, a key must be written to the FLSHKY, Address 0xBA) to initiate any user access to the flash memory. Upon completion of the flash memory operation, the FLSHKY SFR is reset such that it must be written to before another flash memory operation. Requiring the key to be set before an access to the flash memory decreases the likelihood of user code or data being overwritten by a runaway program. The program counter, PC, is held on the instruction where the ECON SFR is written to until the flash memory controller is done performing the requested operation. Then, the PC increments to continue with the next instruction. Any interrupt requests that occur while the flash controller is performing an operation are not handled until the flash operation is complete. All peripherals, such as timers and counters, continue to operate as configured throughout the flash memory access. Table 102. Flash Control SFR (ECON, Address 0xB9) Bit Mnemonic Default Value Description [7:0] ECON 0 1 Write byte. The value in EDATA is written to the flash memory at the page address given by EADRH (Address 0xC7) and EADRL (Address 0xC6). Note that the byte being addressed must be pre-erased. 2 Erase page. A 512-byte page of flash memory address is erased. The page is selected by the address in EADRH and EADRL. Any address in the page can be written to EADRH and EADRL to select it for erasure. 3 Erase all. All 16 kB of the available flash memory are erased. Note that this command is used during serial mode and parallel download mode but should not be executed by user code. 4 Read byte. The byte in the flash memory addressed by EADRH/EADRL is read into EDATA. 5 Erase Page and Write Byte. The page that holds the byte addressed by EADRH/EADRL is erased. Data in EDATA is then written to the byte of flash memory addressed by EADRH/EADRL. 8 Protect code (see the Protecting the Flash section). Table 103. Flash Key SFR (FLSHKY, Address 0xBA) Bit Mnemonic Default Description [7:0] FLSHKY 0xFF The content of this SFR is compared to the flash key, 0x3B. If the two values match, the next ECON operation is allowed (see the Protecting the Flash section). Table 104. Flash Protection Key SFR (PROTKY, Address 0xBB) Bit Mnemonic Default Description [7:0] PROTKY 0xFF The content of this SFR is compared to the flash memory location at Address 0x3FFA. If the two values match, the update of the write/erase and read protection setup is allowed (see the Protecting the Flash section). If the protection key in the flash is 0xFF, the PROTKY SFR value is not used for comparison. This SFR is also used to write the protection key in the flash. This is done by writing the desired value in PROTKY and by writing 0x08 in the ECON SFR. This operation can only be done once. Table 105. Flash Data SFR (EDATA, Address 0xBC) Bit Mnemonic Default Description [7:0] EDATA 0 Flash pointer data. |
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