ADE7166_15 datasheet(108/152 Pages) AD

108 / 152 page

ADE7116/ADE7156/ADE7166/ADE7169/ADE7566/ADE7569

Rev. B | Page 108 of 1

FLASH MEMORY

FLASH MEMORY OVERVIEW

Flash memory is a type of nonvolatile memory that is in-circuit

programmable. The default, erased state of a byte of flash memory

is 0xFF. When a byte of flash memory is programmed, the required

bits change from 1 to 0. The flash memory must be erased to

turn the 0s back to 1s. A byte of flash memory cannot, however,

be erased individually. The entire segment, or page, of flash

memory that contains the byte must be erased.

The ADE7116/ADE7156/ADE7166/ADE7169/ADE7566/

ADE7569 provide 16 kB of flash program/information memory.

This memory is segmented into 32 pages that each contain 512

bytes each. To reprogram one byte of flash memory, the other

511 bytes in that page must be erased. The flash memory can be

erased by page or all at once in a mass erase. There is a command

to verify that a flash write operation has completed successfully.

The ADE7116/ADE7156/ADE7166/ADE7169/ADE7566/

ADE7569 flash memory controller also offers configurable flash

memory protection.

The 16 kB of flash memory are provided on-chip to facilitate

code execution without any external discrete ROM device

requirements. The program memory can be programmed in-

circuit, using the serial download mode provided or using

conventional third party memory programmers.

Flash/EE Memory Reliability

The flash memory arrays on the ADE7116/ADE7156/

ADE7166/ADE7169/ADE7566/ADE7569 are fully qualified for

two key Flash/EE memory characteristics: Flash/EE memory

cycling endurance and Flash/EE memory data retention.

Endurance quantifies the ability of the Flash/EE memory to be

cycled through many program, read, and erase cycles. In real

terms, a single endurance cycle is composed of four independent,

sequential events:

Initial page erase sequence.

Read/verify sequence.

Byte program sequence.

Second read/verify sequence.

In reliability qualification, every byte in both the program and

data Flash/EE memory is cycled from 0x00 to 0xFF until a first

fail is recorded, signifying the endurance limit of the on-chip

Flash/EE memory.

As indicated in the Specifications section, the ADE7116/

ADE7156/ADE7166/ADE7169/ADE7566/ADE7569 flash

memory endurance qualification has been carried out in

accordance with JEDEC Standard 22 Method A117 over the

industrial temperature range of −40°C, +25°C, and +85°C. The

results allow the specification of a minimum endurance figure

over supply and temperature of 100,000 cycles, with a minimum

endurance figure of 20,000 cycles of operation at 25°C.

Retention is the ability of the flash memory to retain its

programmed data over time. Again, the parts have been

qualified in accordance with the formal JEDEC Retention

Lifetime Specification (A117) at a specific junction temperature

(TJ = 55°C).

As part of this qualification procedure, the flash memory is

cycled to its specified endurance limit described previously,

before data retention is characterized. This means that the flash

memory is guaranteed to retain its data for its full specified

retention lifetime every time the flash memory is

reprogrammed. It should also be noted that retention lifetime,

based on an activation energy of 0.6 eV, derates with TJ as

shown in Figure 93.

TJ JUNCTION TEMPERATURE (°C)

250

200

150

100

110

300

100

ANALOG DEVICES

SPECIFICATION

100 YEARS MIN.

AT TJ = 55°C

Figure 93. Flash/EE Memory Data Retention

ADE7166 датащи(PDF) 108 Page - Analog Devices

ADE7166 датащи(HTML) 108 Page - Analog Devices

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

датащи скачать

ссылки URL