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CD22103AD датащи(PDF) 2 Page - Intersil Corporation

номер детали CD22103AD
подробное описание детали  CMOS HDB3 High Density Bipolar 3 Transcoder for 2.048/8.448Mb/s Transmission Applications
PDF  7 Pages
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производитель  INTERSIL [Intersil Corporation]
домашняя страница  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

CD22103AD датащи(HTML) 2 Page - Intersil Corporation

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69
Absolute Maximum Ratings
Thermal Information
Supply Voltage (VDD)
(Voltages referenced to VSS Terminal) . . . . . . . . . . . . . -0.5 to 8V
Supply Voltage Range
For TA = Full Package Temperature Range . . . . . . . . . . . . 4.5V to 5.5V
Input Voltage (All Inputs) . . . . . . . . . . . . . . . . . . . -0.5 to VDD +0.5V
Input Current (Any One Input)
. . . . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Power Dissipation
For TA = -40
oC to 60oC (Package Type E). . . . . . . . . . . . .500mW
For TA = 60
oC to 85oC
(Package Type E) . . . . . . . . Derate Linearly 12mW/oC to 200mW
For TA = -55
oC to 100oC (Package Type D). . . . . . . . . . . .500mW
For TA = 100
oC to 125oC
(Package Type D) . . . . . . . . Derate Linearly 12mW/oC to 200mW
Device Dissipation per Output Transistor
For TA = Full Package Temperature Range (All Types) . . . . . 100mW
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . .175oC
Maximum Junction Temperature (Plastic Package) . . . . . . . . .150oC
Maximum Storage Temperature Range . . . . . . . -65oC
≤ TA ≤ 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300oC
Operating Conditions
Temperature Range
Package Type D . . . . . . . . . . . . . . . . . . . . . . . -55oC
≤ TA ≤ 125oC
Package Type E . . . . . . . . . . . . . . . . . . . . . . . . -40oC
≤ TA ≤ 85oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
VDD = 5V ±10%, TA = 25
oC
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
STATIC SPECIFICATIONS
Quiescent Device Current
IDD
-
-
100
µA
Operating Device Current
fCL = 10MHz
-
-
8
mA
HDB3 Output Low (Sink) Current
IOL1
VOL = 0.5V
1.6
-
-
mA
HDB3 Output High (Source) Current
IOH1
VOH = 2.8V
-10
-
-
mA
All Other Outputs Low (Sink) Current
IOL2
VOL = 0.5V
1.6
-
-
mA
All Other Outputs High (Source) Current
IOH2
VOH = 2.8V
-1.6
-
-
mA
Input Low Current
IIL
--
-1
µA
Input High Current
IIH
--
1
µA
Input Low Voltage
VIL
-
-
0.8
V
Input High Voltage
VIH
2-
-
V
Input Capacitance
IIN
--
5
pF
Electrical Specifications
TA = -40
oC to 85oC for Plastic Package; -55oC to 125oC for Ceramic Package; V
DD = 4.5V to 5.5V;
CL = 15pF
PARAMETER
SYMBOL
FIGURE
MIN
TYP
MAX
UNITS
DYNAMIC INPUT
CTX, CRX Input Frequency
fCTX, fCRX
0.05
-
10
MHz
CTX, CRX Input Rise Time
tRCL
3-
-1
µs
Fall Time
tFCL
3-
-1
µs
NRZ-IN to CTX
Data Setup Time
tS
315
-
-
ns
Data Hold Time
tH
315
-
-
ns
HDB3 IN to CRX
Data Setup Time
tS
415
-
-
ns
Data Hold Time
tH
30
-
-
ns
CD22103A



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