VE28F008

Symbol

Parameter

Notes

Unit

Min

Max

Write Cycle Time

95

ns

RP High Recovery to WE Going Low

2

1

m

s

CE Setup to WE Going Low

10

ns

WE Pulse Width

40

ns

2

100

ns

Address Setup to WE Going High

3

40

ns

Data Setup to WE Going High

4

40

ns

Data Hold from WE High

5

ns

Address Hold from WE High

5

ns

CE Hold from WE High

10

ns

WE Pulse Width High

30

ns

WE High to RYBY Going Low

100

ns

Duration of Byte Write Operation

5 6

6

m

s

Duration of Block Erase Operation

5 6

03

sec

Write Recovery before Read

0

m

s

2 6

0

ns

NOTES

1 Read timing characteristics during erase and byte write operations are the same as during read-only operations Refer to

AC Characteristics for Read-Only Operations

2 Sampled not 100% tested

5 The on-chip Write State Machine incorporates all byte write and block erase system functions and overhead of standard

Intel flash memory including byte program and verify (byte write) and block precondition precondition verify erase and

erase verify (block erase)

7 See AC InputOutput Reference Waveforms and AC Testing Load Circuits for testing characteristics

BLOCK ERASE AND BYTE WRITE PERFORMANCE

Parameter

Notes

VE28F008-95

Unit

Min

Typ

Max

Block Erase Time

1 2

16

10

sec

Block Write Time

1 2

06

21

sec

NOTES

2 Excludes System-Level Overhead

21