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28F008SA датащи(PDF) 17 Page - Intel Corporation

номер детали 28F008SA
подробное описание детали  8 MBIT (1 MBIT x 8) FLASH MEMORY
PDF  26 Pages
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производитель  INTEL [Intel Corporation]
домашняя страница  http://www.intel.com
Logo INTEL - Intel Corporation

28F008SA датащи(HTML) 17 Page - Intel Corporation

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VE28F008
DC CHARACTERISTICS (Continued)
Symbol
Parameter
Notes
Min
Max
Unit
Test Conditions
ICCW
VCC Byte Write Current
1
30
mA
Byte Write In Progress
ICCE
VCC Block Erase Current
1
30
mA
Block Erase In Progress
ICCES
VCC Erase Suspend Current
1 2
10
mA
Block Erase Suspended
CE e VIH
IPPS
VPP Standby Current
1
g
15
m
AVPP s VCC
200
m
AVPP l VCC
IPPD
VPP Deep Powerdown
1
20
m
ARP e GND g02V
Current
IPPW
VPP Write Current
1
30
mA
VPP e VPPH
Byte Write in Progress
IPPE
VPP Block Erase Current
1
30
mA
VPP e VPPH
Block Write in Progress
IPPES
VPP Erase Suspend
1
200
m
AVPP e VPPH
Current
Block Erase Suspended
VIL
Input Low Voltage
b
05
08
V
VIH
Input High Voltage
20
VCC a 05
V
VOL
Output Low Voltage
3
045
V
VCC e VCC Min
IOL e 58 mA
VOH
Output High Voltage
3
24
V
VCC e VCC Min
IOH eb25 mA
VPPL
VPP during Normal
4
00
65
V
Operations
VPPH
VPP during EraseWrite
114
126
V
Operations
VLKO
VCC EraseWrite Lock
18
V
Voltage
CAPACITANCE(5) TA e 25 C f e 1 MHz
Symbol
Parameter
Typ
Max
Unit
Conditions
CIN
Input Capacitance
6
8
pF
VIN e 0V
COUT
Output Capacitance
8
12
pF
VOUT e 0V
NOTES
1 All currents are in RMS unless otherwise noted
2 ICCES is specified with the device deselected If the VE28F008 is read while in Erase Suspend Mode current draw is the
sum of ICCES and ICCR
3 Includes RYBY
4 Block ErasesByte Writes are inhibited when VPP e VPPL and not guaranteed in the range between VPPH and VPPL
5 Sampled not 100% tested
17



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