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MS6N95 датащи(PDF) 3 Page - Bruckewell Technology LTD

номер детали MS6N95
подробное описание детали  950V N-Channel MOSFET
PDF  4 Pages
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производитель  BWTECH [Bruckewell Technology LTD]
домашняя страница  http://www.bruckewell-semi.com
Logo BWTECH - Bruckewell Technology LTD

MS6N95 датащи(HTML) 3 Page - Bruckewell Technology LTD

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MS6N95
950V N-Channel MOSFET
Publication Order Number: [MS6N95]
© Bruckewell Technology Corporation Rev. A -2014
Switching Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
td(on)
Turn-On Time
VDS = 450 V, ID = 6 A,
RG = 25 Ω
--
50
--
ns
tr
Turn-On Rise Time
--
100
--
ns
td(off)
Turn-Off Delay Time
--
50
--
ns
tf
Turn-Off Fall Time
--
60
--
ns
Qg
Total Gate Charge
VDS = 720 V, ID = 6 A,
VGS = 10 V
--
33
--
nC
Qgs
Gate-Source Charge
--
10
--
nC
Qgd
Gate-Drain Charge
--
13
--
nC
Source-Drain Diode Maximum Ratings and Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
IS
Continuous Source-Drain Diode Forward Current
--
--
6.0
A
ISM
ISM Pulsed Source-Drain Diode Forward Current
--
--
24.0
VSD
Source-Drain Diode Forward Voltage
IS = 6 A , VGS = 0 V
--
--
1.4
V
Trr
Reverse Recovery Time
IS = 6 A , VGS = 0 V
diF/dt=100A/μs
--
0.65
--
ns
Qrr
Reverse Recovery Charge
--
7.0
--
μC
Notes:
1. Repeativity rating : pulse width limited by junction temperature
2. L = 34.0mH, IAS =6.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤ 6.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.



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