MS6N95

950V N-Channel MOSFET

Publication Order Number: [MS6N95]

Description

The MS6N95 is a N-channel enhancement-mode

MOSFET , providing the designer with the best

combination of fast switching, ruggedized device design,

low on-resistance and cost effectiveness. The TO-220

package is universally preferred for all

commercial-industrial applications

Features

•

RDS(on) (Max 2.4 Ω )@VGS=10V

• Gate Charge (Typical 33nC)

• Improved dv/dt Capability, High Ruggedness

• 100% Avalanche Tested

• Maximum Junction Temperature Range (150°C)

• RoHS compliant package

Application

• Adapter

• Switching Mode Power Supply

Packing & Order Information

50/Tube ; 1,000/Box

Graphic symbol

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Tc=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

Drain-Source Voltage

950

V

Drain Current -Continuous (TC=25°C)

6

A

Drain Current -Continuous (TC=100°C)

3.8

A

Drain Current

–Pulsed

24

A

Gate-Source Voltage

±30

V

Single Pulsed Avalanche Energy

650

mJ

Repetitive Avalanche Energy

16.7

mJ

dv/dt

Peak Diode Recovery dv/dt

4.5

V/ns