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SST211 датащи(PDF) 3 Page - TEMIC Semiconductors

номер детали SST211
подробное описание детали  N-Channel Lateral DMOS FETs
PDF  6 Pages
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производитель  TEMIC [TEMIC Semiconductors]
домашняя страница  http://www.temic.de
Logo TEMIC - TEMIC Semiconductors

SST211 датащи(HTML) 3 Page - TEMIC Semiconductors

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SD211DE/SST211 Series
Siliconix
S-51850—Rev. F, 14-Apr-97
3
Specificationsa
Limits
211 Series
213 Series
215 Series
Parameter
Symbolb
Test Conditionsb
Typc
Min
Max
Min
Max
Min
Max
Unit
Dynamic
Forward
gfs
VDS = 10 V
SD Series
11
10
10
10
Forward
Transconductance
gfs
VDS = 10 V
VSB = 0 V
ID =20mA f=1kHz
SST Series
10.5
9
9
9
mS
Transconductance
gos
ID = 20 mA, f = 1 kHz
All
0.9
Gate Node
Capacitance
C(GS+GD+GB)
2.5
3.5
3.5
3.5
Drain Node
Capacitance
C(GD+DB)
VDS = 10 V
f=1MHz
SD Series
1.1
1.5
1.5
1.5
pF
Source Node
Ci
C(GS+SB)
f = 1 MHz
VGS = VBS = –15 V
3.7
5.5
5.5
5.5
pF
Capacitance
C(GS+SB)
VGS
VBS
15 V
SST Series
4.2
Reverse Transfer
Capacitance
Crss
SD Series
0.2
0.5
0.5
0.5
Switching
Turn-On Time
td(on)
SD S i
O l
0.5
1
1
1
Turn-On Time
tr
SD Series Only
VSB = 0 V, VIN 0 to 5 V, RG = 25 W
0.6
1
1
1
ns
Turn-Off Time
td(off)
VSB = 0 V, VIN 0 to 5 V, RG = 25 W
VDD = 5 V, RL = 680 W
2
ns
Turn-Off Time
tf
DD
,
L
6
Notes:
a.
TA = 25_C unless otherwise noted.
DMCBA
b.
B is the body (substrate), and (BR) is breakdown.
c.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.



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