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SST211 датащи(PDF) 2 Page - TEMIC Semiconductors

номер детали SST211
подробное описание детали  N-Channel Lateral DMOS FETs
PDF  6 Pages
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производитель  TEMIC [TEMIC Semiconductors]
домашняя страница  http://www.temic.de
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SST211 датащи(HTML) 2 Page - TEMIC Semiconductors

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SD211DE/SST211 Series
2
Siliconix
S-51850—Rev. F, 14-Apr-97
Absolute Maximum Ratings (TA = 25
_C Unless Otherwise Noted)
GateDrain, GateSource Voltage (SD211DE/SST211) -30/25 V
(SD213DE/SST213) -15/25 V
(SD215DE/SST215) -25/30 V
GateSubstrate Voltagea (SD211DE/SST211)
-0.3/25 V
. . . . . . . .
(SD213DE/SST213)
-0.3/25 V
. . . . . . .
(SD215DE/SST215)
-0.3/30 V
. . . . . . .
DrainSource Voltage
(SD211DE/SST211)
30 V
. . . . . . . . . . . .
(SD213DE/SST213)
10 V
. . . . . . . . . . .
(SD215DE/SST215)
20 V
. . . . . . . . . . .
SourceDrain Voltage
(SD211DE/SST211)
10 V
. . . . . . . . . . . .
(SD213DE/SST213)
10 V
. . . . . . . . . . .
(SD215DE/SST215)
20 V
. . . . . . . . . . .
DrainSubstrate Voltage (SD211DE/SST211)
30 V
. . . . . . . . . . . .
(SD213DE/SST213)
15 V
. . . . . . . . . . .
(SD215DE/SST215)
25 V
. . . . . . . . . . .
SourceSubstrate Voltage (SD211DE/SST211)
15
V
. . . . . . . . . . . .
(SD213DE/SST213)
15 V
. . . . . . . . . . .
(SD215DE/SST215)
25 V
. . . . . . . . . . .
Drain Current
50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 seconds)
300
_C
. . . . . . . . .
Storage Temperature
–65 to 150
_C
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
–55 to 125
_C
. . . . . . . . . . . . . . . . . .
Power Dissipationa
300 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Derate 3 mW/
_C above 25_C
Specificationsa
Limits
211 Series
213 Series
215 Series
Parameter
Symbolb
Test Conditionsb
Typc
Min
Max
Min
Max
Min
Max
Unit
Static
Drain-Source
Bkd
V l
V(BR)DS
VGS = VBS = 0 V, ID = 10 mA
35
30
Breakdown Voltage
V(BR)DS
VGS = VBS = –5 V, ID = 10 nA
30
10
10
20
Source-Drain
Breakdown Voltage
V(BR)SD
VGD = VBD = –5 V, IS = 10 nA
22
10
10
20
V
Drain-Substrate
Breakdown Voltage
V(BR)DBO
VGB = 0 V, ID = 10 nA,
Source Open
35
15
15
25
V
Source-Substrate
Breakdown Voltage
V(BR)SBO
VGB = 0 V, IS = 10 mA,
Drain Open
35
15
15
25
Drain-Source
Lk
IDS(off)
VGS =VBS = –5V
VDS = 10 V
0.4
10
10
Leakage
IDS(off)
VGS = VBS = –5 V
VDS = 20 V
0.9
10
Source-Drain
Lk
ISD(off)
VGD =VBD = –5V
VSD = 10 V
0.5
10
10
nA
Leakage
ISD(off)
VGD = VBD = –5 V
VSD = 20 V
1
10
Gate Leakage
IGBS
VDB = VSB = 0 V, VGB = 30V
0.01
100
100
100
Threshold Voltage
VGS(th)
VDS = VGS, ID = 1 mA
VSB = 0 V
0.8
0.5
1.5
0.1
1.5
0.1
1.5
V
VGS = 5 V
(SD Series)
58
70
70
70
W
VGS = 5 V
(SST
Series)
60
75
75
75
W
Drain-Source
On Resistance
rDS(on)
VSB = 0 V
ID = 1mA
VGS = 10 V
(SD Series)
38
45
45
45
W
On-Resistance
rDS(on)
ID = 1 mA
VGS = 10 V
(SST
Series)
40
50
50
50
W
VGS = 15 V
30
VGS = 20 V
26
VGS = 25 V
24



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