IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA2N80P

IXTP2N80P

IXTU2N80P

IXTY2N80P

Fig. 7. Input Admittance

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

4

4.4

4.8

5.2

5.6

6

6.4

25ºC

- 40ºC

Fig. 8. Transconductance

0

0.5

1

1.5

2

2.5

3

3.5

4

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

25ºC

125ºC

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

0.4

0.5

0.6

0.7

0.8

0.9

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

01

234

567

89

10

11

12

Fig. 11. Capacitance

1

10

100

1,000

0

5

10

15

20

25

30

35

40

f = 1 MHz

Ciss

Crss

Coss

Fig. 12. Maximum Transient Thermal

Resistance

0.1

1.0

10.0

0.0001

0.001

0.01

0.1

1

10

Pulse W idth - Seconds

IXYS REF: T_2N80P (2J) 8-07-06.xls