IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA2N80P

IXTP2N80P

IXTU2N80P

IXTY2N80P

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

1.4

2.4

S

C

iss

440

pF

C

oss

V

36

pF

C

rss

4.4

pF

t

d(on)

25

ns

t

r

V

35

ns

t

d(off)

R

53

ns

t

f

28

ns

Q

g(on)

10.6

nC

Q

gs

V

3.7

nC

Q

gd

4.5

nC

R

thJC

1.80

°C/W

R

thCS

(TO-220)

0.25

°C/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

2

A

I

SM

Repetitive

6

A

V

SD

I

1.5

V

t

rr

I

650

ns

V

TO-263 (IXTA) Outline

TO-220 (IXTP) Outline

Pins:

1 - Gate

2 - Drain

3 - Source

4 - Drain

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2

6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note 1: Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %