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L6207Q датащи(PDF) 19 Page - STMicroelectronics

номер детали L6207Q
подробное описание детали  DMOS dual full bridge driver
PDF  27 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L6207Q датащи(HTML) 19 Page - STMicroelectronics

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L6207Q
Application information
27
6
Application information
A typical application using the L6207Q device is shown in Figure 18. Typical component
values for the application are shown in Table 7. A high quality ceramic capacitor in the range
of 100 to 200 nF should be placed between the power pins (VSA and VSB) and ground near
the L6207Q to improve the high frequency filtering on the power supply and reduce high
frequency transients generated by the switching. The capacitors connected from the ENA
and ENB inputs to ground set the shutdown time for bridge A and bridge B, respectively,
when an overcurrent is detected (see Section 5.5). The two current sensing inputs
(SENSEA and SENSEB) should be connected to the sensing resistors with a trace length as
short as possible in the layout. The sense resistors should be non-inductive resistors to
minimize the di/dt transients across the resistor. To increase noise immunity, unused logic
pins (except ENA and ENB) are best connected to 5 V (high logic level) or GND (low logic
level) (see Section 3). It is recommended to keep power ground and signal ground
separated on the PCB.
Table 7. Component values for typical application
Component
Value
C1
100
F
C2
100 nF
CA
1 nF
CB
1 nF
CBOOT
220 nF
CP
10 nF
CENA
5.6 nF
CENB
5.6 nF
CREFA
68 nF
CREFB
68 nF
D1
1N4148
D2
1N4148
RA
39 k
RB
39 k
RENA
100 k
RENB
100 k
RP
100
RSENSEA
0.3
RSENSEB
0.3



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