L6207Q datasheet(7/27 Pages) STMICROELECTRONICS

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DocID018993 Rev 3

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L6207Q

Electrical characteristics

VS = 48 V, TA = 25 °C, unless otherwise specified.

Table 4. Electrical characteristics

Symbol

Parameter

Test condition

Min.

Typ. Max. Unit

VSth(ON)

Turn-on threshold

6.6

7.4

VSth(OFF) Turn-off threshold

5.6

6.4

Quiescent supply current

All bridges OFF; Tj = -25 °C to

125 °C(1)

510

Tj(OFF)

Thermal shutdown temperature

165

°C

Output DMOS transistors

RDS(ON)

High-side switch ON resistance

Tj = 25 °C

0.34

0.4



Tj = 125 °C(1)

0.53

0.59

Low-side switch ON resistance

Tj = 25 °C

0.28

0.34

Tj = 125 °C(1)

0.47

0.53

IDSS

Leakage current

EN = low; OUT = VS

2mA

EN = low; OUT = GND

-0.15

Source drain diodes

VSD

Forward ON voltage

ISD = 2.5 A, EN = low

1.15

1.3

trr

Reverse recovery time

If = 2.5 A

300

tfr

Forward recovery time

200

Logic input

VIL

Low level logic input voltage

-0.3

0.8

VIH

High level logic input voltage

IIL

Low level logic input current

GND logic input voltage

-10

µA

IIH

High level logic input current

7 V logic input voltage

µA

Vth(ON)

Turn-on input threshold

1.8

Vth(OFF)

Turn-off input threshold

0.8

1.3

Vth(HYS)

Input threshold hysteresis

0.25

0.5

Switching characteristics

tD(on)EN

Enable to out turn ON delay time(2)

ILOAD = 2.5 A, resistive load

100

250

400

tD(on)IN

Input to out turn ON delay time

ILOAD = 2.5 A, resistive load

(deadtime included)

1.6

µs

tRISE

Output rise time(2)

ILOAD = 2.5 A, resistive load

250

tD(off)EN

Enable to out turn OFF delay time(2) ILOAD = 2.5 A, resistive load

300

550

800

tD(off)IN

Input to out turn OFF delay time

ILOAD = 2.5 A, resistive load

600

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