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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IXTP32P20T датащи(PDF) 1 Page - IXYS Corporation |
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IXTP32P20T датащи(HTML) 1 Page - IXYS Corporation |
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1 / 7 page  © 2010 IXYS CORPORATION, All Rights Reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C - 200 V V DGR T J = 25 °C to 150°C, R GS = 1MΩ - 200 V V GSS Continuous + 15 V V GSM Transient + 25 V I D25 T C = 25°C - 32 A I DM T C = 25°C, Pulse Width Limited by TJM - 96 A I A T C = 25°C - 32 A E AS T C = 25°C1 J P D T C = 25°C 300 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6mm (0.062 in.) from Case for 10s 300 °C T SOLD Plastic body for 10s 260 °C F C Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb. M d Mounting Torque (TO-220, TO-247 & TO-3P) 1.13 / 10 Nm/lb.in. Weight TO-263 2.5 g TO-220 3.0 g TO-3P 5.5 g TO-247 6.0 g DS100288A(11/10) TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA32P20T IXTP32P20T IXTQ32P20T IXTH32P20T V DSS = - 200V I D25 = - 32A R DS(on) ≤ ≤≤≤≤ 130m Ω Ω Ω Ω Ω Features International Standard Packages Avalanche Rated Extended FBSOA Fast Intrinsic Diode Low R DS(ON) and QG Advantages Easy to Mount Space Savings High Power Density Applications High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications Preliminary Technical Information G = Gate D = Drain S = Source Tab = Drain TO-247 (IXTH) G S D D (Tab) Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, ID = - 250μA - 200 V V GS(th) V DS = VGS, ID = - 250μA - 2.0 - 4.0 V I GSS V GS = ± 15V, VDS = 0V ±100 nA I DSS V DS = VDSS, VGS = 0V - 25 μA T J = 125°C -1.25 mA R DS(on) V GS = -10V, ID = 0.5 • ID25, Note 1 130 m Ω TO-263 AA (IXTA) G S D (Tab) G D S TO-220AB (IXTP) D (Tab) TO-3P (IXTQ) D G S D (Tab) |
Аналогичный номер детали - IXTP32P20T |
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Аналогичное описание - IXTP32P20T |
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