IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA32P20T IXTQ32P20T

IXTP32P20T IXTH32P20T

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note

1: Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

Note 1

18

30

S

C

iss

14.5

nF

C

oss

V

565

pF

C

rss

105

pF

t

d(on)

32

ns

t

r

15

ns

t

d(off)

57

ns

t

f

12

ns

Q

g(on)

185

nC

Q

gs

V

66

nC

Q

gd

45

nC

R

thJC

0.42

°C/W

R

thCS

TO-220

0.50

°C/W

TO-247 &TO-3P

0.21

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

- 32

A

I

SM

Repetitive, Pulse Width Limited by T

JM

- 128

A

V

SD

I

-1.3

V

t

rr

190

ns

Q

RM

1.7

μC

I

RM

-17.8

A

Resistive Switching Times

V

R

I

V

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.