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BAW56 датащи(PDF) 2 Page - General Semiconductor |
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BAW56 датащи(HTML) 2 Page - General Semiconductor |
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2 / 2 page ![]() ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified BAW56 Symbol Min. Typ. Max. Unit Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA VF VF VF VF – – – – – – – – 0.715 0.855 1.0 1.25 V V V V Leakage Current at VR = 70 V at VR = 70 V, Tj = 150 °C at VR = 25 V, Tj = 150 °C IR IR IR – – – – – – 2.5 100 30 µA µA µA Capacitance at VF = VR = 0, f = 1 MHz Ctot ––2pF Reverse Recovery Time from IF = 10 mA to IR = 10 mA measured at IR = 1 mA, RL = 100 Ω trr ––6ns Thermal Resistance Junction to Ambient Air RthJA – – 4301) K/W 1) Device on fiberglass substrate, see layout Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) .59 (15) 0.2 (5) .03 (0.8) .30 (7.5) .12 (3) .04 (1) .06 (1.5) .20 (5.1) .08 (2) .08 (2) .04 (1) Dimensions in inches (millimeters) .47 (12) |
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