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BAW56 датащи(PDF) 1 Page - General Semiconductor |
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BAW56 датащи(HTML) 1 Page - General Semiconductor |
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1 / 2 page ![]() FEATURES Small Signal Diodes Dimensions in inches and (millimeters) .016 (0.4) .037(0.95) .037(0.95) .122 (3.1) .016 (0.4) .016 (0.4) 3 12 Top View .102 (2.6) .118 (3.0) .094 (2.4) Case: SOT-23 Plastic Package Weight: approx. 0.008 g MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings for a single diode at 25 °C ambient temperature unless otherwise specified. SOT-23 4/98 BAW56 Marking JD Symbol Value Unit Reverse Voltage, Peak Reverse Voltage VR, VRM 70 V Forward Current (continuous) IF 250 mA Non-Repetitive Peak Forward Current at t = 1 µs at t = 1 ms at t = 1 s IFSM IFSM IFSM 2 1 0.5 A A A Power Dissipation at Tamb = 25 °C Ptot 3501) mW Junction Temperature Tj 150 °C Storage Temperature Range TS –65 to +150 °C 1) Device on fiberglass substrate, see layout Top View 1 3 2 Silicon Epitaxial Planar Diodes Fast switching dual diode with common anode. This diode is also available in other configurations including: a single diode with type designation BAL99, a dual anode to cathode with type designation BAV99, and a dual common cathode with type designation BAV70. ♦ ♦ ♦ |
Аналогичный номер детали - BAW56 |
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Аналогичное описание - BAW56 |
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