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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MB84VB2000 датащи(PDF) 14 Page - fujitsu semiconductor |
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MB84VB2000 датащи(HTML) 14 Page - fujitsu semiconductor |
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14 / 28 page  14 MB84VB2000-10/MB84VB2001-10 • Erase/Program Operations Notes: 1. This does not include the preprogramming time. 2. This timing is for Sector Protection operation. Parameter Symbols Description -10 Unit JEDEC Standard Min. Typ. Max. tAVAV tWC Write Cycle Time 100 — — ns tAVWL tAS Address Setup Time (WE to Addr.) 0 — — ns tAVEL tAS Address Setup Time (CE to Addr.) 0 — — ns tWLAX tAH Address Hold Time (WE to Addr.) 50 — — ns tELAX tAH Address Hold Time (CE to Addr.) 50 — — ns tDVWH tDS Data Setup Time 50 — — ns tWHDX tDH Data Hold Time 0 — — ns —tOES Output Enable Setup Time 0 — — ns —tOEH Output Enable Hold Time Read 0 — — ns Toggle and Data Polling 10 — — ns tGHEL tGHEL Read Recover Time Before Write (OE to CE)0 — — ns tGHWL tGHWL Read Recover Time Before Write (OE to WE)0 — — ns tWLEL tWS WE Setup Time (CE to WE)0 — — ns tELWL tCS CE Setup Time (WE to CE)0 — — ns tEHWH tWH WE Hold Time (CE to WE)0 — — ns tWHEH tCH CE Hold Time (WE to CE)0 — — ns tWLWH tWP Write Pulse Width 50 — — ns tELEH tCP CE Pulse Width 50 — — ns tWHWL tWPH Write Pulse Width High 30 — — ns tEHEL tCPH CE Pulse Width High 30 — — ns tWHWH1 tWHWH1 Byte Programming Operation — 8 — µs tWHWH2 tWHWH2 Sector Erase Operation (Note 1) — 1 15 sec —tVCS VCC Setup Time 50 — — µs —tVIDR Rise Time to VID (Note 2) 500 — — ns —tVLHT Voltage Transition Time (Note 2) 4 — — µs —tWPP Write Pulse Width (Note 2) 100 — — µs —tOESP OE Setup Time to WE Active (Note 2) 4 — — µs —tCSP CE Setup Time to WE Active (Note 2) 4 — — µs —tRB Recover Time from RY/BY 0— — ns —tRP RESET Pulse Width 500 — — ns —tRH RESET Hold Time Before Read 200 — — ns —tEOE Delay Time from Embedded Output Enable — — 100 ns —tBUSY Program/Erase Valid to RY/BY Delay — — 90 ns —tFLQZ BYTE Switching Low to Output High-Z — — 30 ns —tFLQV BYTE Switching High to Output Active 30 — — ns |
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