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MB84VB2000 датащи(PDF) 12 Page - fujitsu semiconductor |
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MB84VB2000 датащи(HTML) 12 Page - fujitsu semiconductor |
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12 / 28 page ![]() 12 MB84VB2000-10/MB84VB2001-10 s DC CHARACTERISTICS Notes: 1.The ICC current listed includes both the DC operating current and the frequency dependent component (at 10 MHz). 2.ICC active while Embedded Algorithm (program or erase) is in progress. 3. Automatic sleep mode enables the low power mode when address remain stable for 150 ns. 4. (VID – VCC) do not exceed 9 V. 5. Total power consumption is (condition of Flash 1) + (condition of Flash 2). Parameter Symbol Parameter Description Test Conditions Min. Max. Unit ILI Input Leakage Current VIN = VSS to VCC, VCC = VCC Max. –1.0 +1.0 µA ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCC Max. –1.0 +1.0 µA ILIT A9, OE, RESET Inputs Leakage Current VCC = VCC Max. A9, OE, RESET = 12.5 V —70 µA ICC1 VCC Active Current (Note 1, 5) CE = VIL, OE = VIH, f = 10 MHz Byte — 22 mA Word 25 CE = VIL, OE = VIH, f = 5 MHz Byte — 12 mA Word 15 ICC2 VCC Active Current (Note 2, 5) CE = VIL, OE = VIH —35 mA ICC3 VCC Current (Standby) (Note 5) VCC = VCC Max., CE = VCC ± 0.3 V, RESET = VCC ± 0.3 V —5 µA ICC4 VCC Current (Standby, Reset) (Note 5) VCC = VCC Max., RESET = VSS ± 0.3 V —5 µA ICC5 VCC Current (Automatic Sleep Mode) (Note 3, 5) VCC = VCC Max., CE = VSS ± 0.3 V, RESET = VCC ± 0.3 V VIN = VCC ± 0.3 V or VSS ± 0.3 V —5 µA VIL Input Low Level — –0.5 0.6 V VIH Input High Level — 2.0 VCC + 0.3 V VID Voltage for Autoselect and Sector Protection (A9, OE, RESET) (Note 4) — 11.5 12.5 V VOL Output Low Voltage Level IOL = 4.0 mA, VCC = VCC Min. — 0.45 V VOH1 Output High Voltage Level IOH = –2.0 mA, VCC = VCC Min. 2.4 — V VOH2 IOH = –100 µA, VCC = VCC Min. VCC – 0.4 — V VLKO Low VCC Lock-Out Voltage — 2.3 2.5 V |
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