NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0013C

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information

1/

SFR9130 __ __ __

│

│

│

│

│

│

│

│

│

└

│

│

│

│

│

└

└

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

Lead Options

__ = Straight Leads

DB = Down Bend

UB = Up Bend

J = TO-257

SFR9130J

RADIATION TOLERANT

20 AMP, 100 Volts, 90 mΩ

Avalanche Rated P-MOSFET

Features:



Rugged Trench Technology



Low ON-resistance: 60mΩ typ



Radiation tolerant: less than 0.5V typical gate

threshold shift @ TID= 100kRAD



SEU and SEGR resistant to LET 38



Avalanche rated



Hermetically Sealed Power Packaging



Low Total Gate Charge, Fast Switching



Replacement for IRF9130 types



TX, TXV, S-Level screening available

Maximum Ratings

Symbol

Value

Units

Drain – Source Voltage

-100

V

Gate – Source Voltage, continuous

Gate – Source Voltage, transient

±15

±25

V

Max. Continuous Drain Current

(package limited)

20

15

A

Max. Avalanche Current

@ L= 5.0mH

26

A

Max. Continuous Drain Current (Tj limited)

@ Tj= 150ºC

26

A

Single Pulse Avalanche Energy

@ L= 5.0mH

300

mJ

Total Power Dissipation

75

W

Operating & Storage Temperature

-55 to +150

ºC

Maximum Thermal Resistance

(Junction to Case)

1.65

ºC/W

NOTES:

TO-257 (J)

*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Unless otherwise specified, all electrical characteristics @25