NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0013C

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFR9130J

Symbol

Min

Typ Max Units

Drain to Source Breakdown Voltage

-100

- 115

-

V

Drain to Source On State Resistance

-

-

60

100

90

-

mΩ

Gate Threshold Voltage

-2.0

-1.0

-

-3.2

-2.5

-3.6

-4.0

-

-5.0

V

Gate to Source Leakage

-

-

1

10

±50

±200

nA

Zero Gate Voltage Drain Current

-

-

0.01

5

10

250

A

A

Forward Transconductance

-

15

-

Mho

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

-

-

-

23

8.5

5

40

-

-

nC

Turn on Delay Time

Rise Time

Turn off Delay Time

Fall Time

-

-

-

-

65

25

75

30

100

50

150

50

nsec

Diode Forward Voltage

-

0.85

1.5

V

Diode Reverse Recovery Time

Peak Reverse Recovery Current

Reverse Recovery Charge

-

-

55

135

85

-

nsec

nC

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

f = 1 MHz

-

-

-

3500

300

110

4000

400

200

pF

PACKAGE OUTLINE:

TO-257 (J)

PINOUT:

PIN 1: DRAIN

PIN 2: SOURCE

PIN 3: GATE