Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Designer’s Data Sheet

FEATURES:

• Rugged Construction with Poly Silicon Gate

• Low RDS(on) and High Transconductance

• Excellent High Temperature Stability

• Very Fast Switching Speed

• Fast Recovery and Superior dv/dt Performance

• Increased Reverse Energy Capability

• Low Input and Transfer Capacitance for Easy

Paralleling

• Hermetically Sealed

• Replaces: IRF9140 Types

Consult Factory.

SFF9140J

-18 AMPS

-100 VOLTS

0.20

Ω

P-CHANNEL

POWER MOSFET

TO-257

MAXIMUM RATINGS

Symbol

Value

Units

Drain to Source Voltage

-100

Volts

Gate to Source Voltage

±20

Volts

Continuous Drain Current

-18

-11

Amps

Operating and Storage Temperature

-55 to +150

Thermal Resistance, Junction to Case

2.0

Total Device Dissipation

63

48

Watts

Single Pulse Avalanche Energy

500

mJ

Repetitive Avalanche Energy

12.5

mJ

PACKAGE OUTLINE:

TO-257 (J)

PINOUT:

PIN 1: DRAIN

PIN 2: SOURCE

PIN 3: GATE

SUFFIX JDB

SUFFIX JUB

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FP0015G

DOC