FP0015 datasheet(2/2 Pages) SSDI

2 / 2 page

ELECTRICAL CHARACTERISTICS

Symbol

Min

Typ

Max

Unit

Drain to Source Breakdown Voltage

(VGS = 0 V, ID = 1 mA)

∆BV

DSS

-100

––

Volts

Temperature Coefficient of Breakdown Voltage

∆BV

DSS

––

0.087

––

Volts

Drain to Source ON State Resistance

(VGS = -10 V)

ID = 11A

ID = 18A

RDS(on)

––

0.15

––

0.20

0.23

Ω

Gate Threshold Voltage

(VDS = VGS, ID = 250

µA)

VGS(th)

-2.0

––

-4.0

Volts

Forward Transconductance

(VDS > 10V, IDS = 11A)

gfs

6.1

8.0

––

S mho

Zero Gate Voltage Drain Current

(VDS = 80% rated VDS, VGS = 0 V)

(VDS = 80% rated VDS, VGS = 0 V, TA = 125

oC)

IDSS

––

250

µA

Gate to Source Leakage Forward

Gate to Source Leakage Reverse

At rated VGS

IgSS

––

-100

100

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

VGS = -10 Volts

50% rated VDS

ID = -18 A)

Qgs

Qgd

––

Turn ON Delay Time

Rise Time

Turn OFF Delay Time

Fall TIme

(VDD = 50% of

rated VDS

rated ID

RG = 9.1

Ω)

td(on)r

td(off)

––

Diode Forward Voltage

(IS = rated ID, VGS = 0 V, TJ = 25

°C)

VSD

––

-4.2

Volts

Diode Reverse Recovery Time

Reverse Recovery Charge

TJ = 25

IF = rated ID

di/dt = 100 A/

µsec

trr

QRR

––

170

––

280

3.6

µC

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS = 0 Volts

VDS = -25 Volts

f = 1 MHz

Ciss

Coss

Crss

––

1400

600

200

1650

740

260

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFF9140J

FP0015 датащи(PDF) 2 Page - Solid States Devices, Inc

FP0015 датащи(HTML) 2 Page - Solid States Devices, Inc

Html Pages

1 2

датащи скачать

ссылки URL