MAC4DHM datasheet(1/7 Pages) ONSEMI

номер детали	MAC4DHM

подробное описание детали	Sensitive Gate Triacs Silicon Bidirectional Thyristors

PDF	7 Pages

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производитель	ONSEMI [ON Semiconductor]

домашняя страница	http://www.onsemi.com

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January, 2009 − Rev. 6

1

Publication Order Number:

MAC4DHM/D

MAC4DHM

Preferred Device

Sensitive Gate Triacs

Silicon Bidirectional Thyristors

Designed for high volume, low cost, industrial and consumer

applications such as motor control; process control; temperature, light

and speed control.

Features

• Small Size Surface Mount DPAK Package

• Passivated Die for Reliability and Uniformity

• Four−Quadrant Triggering

• Blocking Voltage to 600 V

• On−State Current Rating of 4.0 A RMS at 93°C

• Low Level Triggering and Holding Characteristics

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings:

Human Body Model, 3B

u 8000 V

Machine Model, C

u 400 V

• Pb−Free Packages are Available

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

(TJ = −40 to 110°C, Sine Wave,

50 to 60 Hz, Gate Open)

VDRM,

VRRM

600

V

On−State RMS Current

(Full Cycle Sine Wave, 60 Hz, TC = 93°C)

IT(RMS)

4.0

A

Peak Non-Repetitive Surge Current

(One Full Cycle, 60 Hz, TJ = 110°C)

ITSM

40

A

Circuit Fusing Consideration (t = 8.3 msec)

I2t

6.6

A2sec

Peak Gate Power

(Pulse Width ≤ 10 msec, TC = 93°C)

PGM

2.0

W

Average Gate Power

(t = 8.3 msec, TC = 93°C)

PG(AV)

1.0

W

Peak Gate Current

(Pulse Width ≤ 20 msec, TC = 93°C)

IGM

4.0

A

Peak Gate Voltage

(Pulse Width ≤ 20 msec, TC = 93°C)

VGM

5.0

V

Operating Junction Temperature Range

TJ

−40 to 110

°C

Storage Temperature Range

Tstg

−40 to 150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the device are exceeded.

TRIACS

4.0 AMPERES RMS

600 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

PIN ASSIGNMENT

1

2

3

Gate

Main Terminal 1

Main Terminal 2

4

Main Terminal 2

MT1

G

MT2

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

DPAK−3

CASE 369D

STYLE 6

DPAK

CASE 369C

STYLE 6

MARKING

DIAGRAMS

Y

= Year

WW

= Work Week

AC4DHM = Device Code

G= Pb−Free Package

1 2

3

4

YWW

AC

4DHMG

1

2

3

4

YWW

AC

4DHMG

Аналогичный номер детали - MAC4DHM

производитель	номер детали	датащи	подробное описание детали
Motorola, Inc	MAC4DHM	131Kb / 6P	TRIACS 4.0 AMPERES RMS 600 VOLTS
ON Semiconductor	MAC4DHM	104Kb / 8P	Sensitive Gate Triacs Silicon Bidirectional Thyristors August, 2004 ??Rev. 4
ON Semiconductor	MAC4DHM	78Kb / 7P	Sensitive Gate Triacs Silicon Bidirectional Thyristors November, 2005 ??Rev. 5
HAOPIN MICROELECTRONICS...	MAC4DHM	382Kb / 5P	Blocking voltage to 600 V
ON Semiconductor	MAC4DHM-001	104Kb / 8P	Sensitive Gate Triacs Silicon Bidirectional Thyristors August, 2004 ??Rev. 4

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Аналогичное описание - MAC4DHM

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	MAC4DLM	103Kb / 8P	Sensitive Gate Triacs Silicon Bidirectional Thyristors August, 2004 ??Rev. 2
	MAC228A	74Kb / 6P	Sensitive Gate Triacs Silicon Bidirectional Thyristors August, 2004 ??Rev. 3
	MAC8S	76Kb / 7P	Sensitive Gate Triacs Silicon Bidirectional Thyristors December, 2005 ??Rev. 5
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	2N6071A	75Kb / 8P	Sensitive Gate Triacs Silicon Bidirectional Thyristors April, 2006 ??Rev. 7
	MAC4DLM	78Kb / 7P	Sensitive Gate Triacs Silicon Bidirectional Thyristors November, 2005 ??Rev. 3
	MAC08BT1	94Kb / 7P	Sensitive Gate Triacs Silicon Bidirectional Thyristors December, 2005 ??Rev. 5
	MAC12SM	60Kb / 5P	Sensitive Gate Triacs Silicon Bidirectional Thyristors December, 2005 ??Rev. 3
	T2322B	56Kb / 4P	Sensitive Gate Triacs Silicon Bidirectional Thyristors May, 2006 ??Rev. 5
Kersemi Electronic Co.,...	MAC12SM	417Kb / 6P	Sensitive Gate Triacs Silicon Bidirectional Thyristors

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