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MAC4DHM датащи(PDF) 5 Page - ON Semiconductor

номер детали MAC4DHM
подробное описание детали  Sensitive Gate Triacs Silicon Bidirectional Thyristors
PDF  7 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MAC4DHM датащи(HTML) 5 Page - ON Semiconductor

  MAC4DHM Datasheet HTML 1Page - ON Semiconductor MAC4DHM Datasheet HTML 2Page - ON Semiconductor MAC4DHM Datasheet HTML 3Page - ON Semiconductor MAC4DHM Datasheet HTML 4Page - ON Semiconductor MAC4DHM Datasheet HTML 5Page - ON Semiconductor MAC4DHM Datasheet HTML 6Page - ON Semiconductor MAC4DHM Datasheet HTML 7Page - ON Semiconductor  
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MAC4DHM
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5
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
Figure 9. Minimum Exponential Static dv/dt
versus Gate−MT1 Resistance
65
110
-40
TJ, JUNCTION TEMPERATURE (°C)
2.0
TJ, JUNCTION TEMPERATURE (°C)
20
110
-40
4.0
2.0
0
1000
10 K
100
GATE-MT1 RESISTANCE (OHMS)
40
30
20
15
5
1.0
0
-25
5.0
20
50
95
-25
5.0
8.0
10
12
4.0
3.0
5.0
80
50
65
MT2 POSITIVE
MT2 NEGATIVE
Q2
Q3
Q1
VD = 400 V
TJ = 110°C
MAC4DHM
6.0
-10
35
80
-10
35
95
Q4
Figure 10. Typical Critical Rate of Rise of
Commutating Voltage
1.0
0
di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
10
1.0
0.1
2.0
3.0
VPK = 400 V
100
°C
90
°C
TJ = 110°C
tw
VDRM
(di/dt)c =
6f ITM
1000
f =
1
2 tw
4.0
5.0
6.0
10
25
35
Figure 11. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
LL
1N4007
200 V
+
MEASURE
I
-
CHARGE
CONTROL
CHARGE
TRIGGER
NON‐POLAR
CL
51
W
MT2
MT1
1N914
G
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
RS
ADJUST FOR
di/dt(c)
CS



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