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ZXTD4591AM832TC датащи(PDF) 4 Page - Diodes Incorporated

номер детали ZXTD4591AM832TC
подробное описание детали  MPPS??Miniature Package Power Solutions Complementary dual 40V high performance transistor
PDF  10 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXTD4591AM832TC датащи(HTML) 4 Page - Diodes Incorporated

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ZXTD4591AM832
Issue 2 - April 2008
4
www.zetex.com
© Zetex Semiconductors plc 2008
NPN Transistor
Electrical characteristics (at Tamb = 25°C unless otherwise stated).
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-Base
breakdown voltage
V(BR)CBO
40
V
IC = 100 A
Collector-Emitter
breakdown voltage
V(BR)CEO
40
V
IC = 10mA (*)
NOTES:
(*) Measured under pulsed conditions.
Emitter-Base
breakdown voltage
V(BR)EBO
5
V
IE = 100 A
Collector cut-off
current
ICBO
100
nA
VCB =30V
Emitter cut-off current
IEBO
100
nA
VEB = 4V
Collector Emitter cut-
off current
ICES
100
nV
VCE = 30V
Collector Emitter
saturation voltage
VCE(sat)
300
500
mV
mV
IC = 0.5A, IB = 50mA(*)
IC = 1A, IB = 100mA(*)
Base-Emitter
saturation voltage
VBE(sat)
1.1
V
IC = 1A, IB = 100mA(*)
Base-Emitter turn-on
voltage
VBE(on)
1.0
V
IC = 1A, VCE = 5V(*)
Static forward current
transfer ratio
hFE
300
300
200
35
900
IC = 1mA, VCE = 5V(*)
IC = 0.5A, VCE = 5V(*)
IC = 1A, VCE = 5V(*)
IC = 2A, VCE = 5V(*)
Transition frequency
fT
150
MHz
IC = -50mA, VCE = -10V
f = 100MHz
Output capacitance
COBO
10
pF
VCB = -10V, f = 1MHz
OBSOLETE - PLEASE USE ZXTC4591AMC



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