ZXTD4591AM832

Issue 2 - April 2008

2

www.zetex.com

© Zetex Semiconductors plc 2008

Absolute maximum ratings

Thermal resistance

NOTES:

(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all

exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected

to each half of the dual device.

(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air

conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with

one half connected to each half of the dual device.

(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal

lead connections only.

(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all

exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half

connected to each half of the dual device.

(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all

exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half

connected to each half of the dual device.

(f) For a dual device with one active die.

(g) For dual device with 2 active die running at equal power.

(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.

(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of

the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick

FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250°C/W

giving a power rating of Ptot = 500mW.

Parameter

Symbol

NPN

PNP

Unit

Collector-Base voltage

40

-40

V

Collector-Emitter voltage

40

-40

V

Emitter-Base voltage

5-5

V

Peak pulse current

3-3

A

Continuous collector current(a)(f)

2-1.5

A

Continuous collector current(b)(f)

2.5

-2.0

A

Base current

300

mA

Linear derating factor

1.5

12

W

mW/

°C

Linear derating factor

2.45

19.6

W

mW/

°C

Linear derating factor

1

8

W

mW/

°C

Linear derating factor

1.13

9

W

mW/

°C

Linear derating factor

1.7

13.6

W

mW/

°C

Linear derating factor

3

24

W

mW/

°C

Storage temperature range

-55 to +150

°C

Junction temperature range

150

°C

Parameter

Symbol

Value

Unit

Junction to ambient(a)(f)

83.3

°C/W

Junction to ambient(b)(f)

51

°C/W

Junction to ambient(c)(f)

125

°C/W

Junction to ambient(d)(f)

111

°C/W

Junction to ambient(d)(g)

73.5

°C/W

Junction to ambient(e)(g)

41.7

°C/W

OBSOLETE - PLEASE USE ZXTC4591AMC