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ACT4065ASH-T датащи(PDF) 3 Page - Active-Semi, Inc |
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ACT4065ASH-T датащи(HTML) 3 Page - Active-Semi, Inc |
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3 / 10 page ![]() Innovative Power TM - 3 - www.active-semi.com Copyright © 2012 Active-Semi, Inc. ACT4065A Rev 0, 23-Apr-12 ® ABSOLUTE MAXIMUM RATINGS : Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may affect device reliability. PARAMETER VALUE UNIT IN Supply Voltage -0.3 to 30 V SW Voltage -1 to VIN + 1 V BS Voltage VSW - 0.3 to VSW + 7 V EN, FB, COMP Voltage -0.3 to 6 V Continuous SW Current Internally limited A Maximum Power Dissipation 0.76 W Junction to Ambient Thermal Resistance ( θJA ) 105 °C/W Operating Junction Temperature -40 to 150 °C Storage Temperature -55 to 150 °C Lead Temperature (Soldering, 10 sec) 300 °C PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Input Voltage VIN VOUT = 5V, ILOAD = 1A 6 30 V Feedback Voltage VFB VCOMP = 1.5V 0.792 0.808 0.824 V High-Side Switch On Resistance RONH 0.22 Ω Low-Side Switch On Resistance RONL 8 Ω SW Leakage VEN = 0 1 10 µA High-Side Switch Current Limit ILIM Duty = 50% 3.5 A COMP to Current Limit Transcon- ductance GCOMP 3.4 A/V Error Amplifier Transconductance GEA ΔICOMP = ±10µA 650 µA/V Error Amplifier DC Gain AVEA 4000 V/V Switching Frequency fSW 190 210 240 kHz Short Circuit Switching Frequency VFB = 0 30 kHz Maximum Duty Cycle DMAX VFB = 0.7V 88 % Minimum Duty Cycle VFB = 1.0V 0 % Enable Threshold Voltage Hysteresis = 0.1V 0.75 0.8 0.85 V Enable Pull-Up Current Pin pulled up to 4.5V typically when left unconnected 4 µA Supply Current in Shutdown VEN = 0 75 100 µA IC Supply Current in Operation VEN = 3V, VFB = 1.0V 0.75 mA Thermal Shutdown Temperature Hysteresis = 10°C 155 °C ELECTRICAL CHARACTERISTICS (VIN = 12V, TJ = 25˚C, unless otherwise specified.) |
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