BSR13 datasheet(1/4 Pages) CDIL

номер детали	BSR13

подробное описание детали	SILICON PLANAR EPITAXIAL TRANSISTORS

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производитель	CDIL [Continental Device India Limited]

домашняя страница	http://www.cdilsemi.com

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Continental Device India Limited

Data Sheet

Page 1 of 4

SILICON PLANAR EPITAXIAL TRANSISTORS

N–P–N silicon transistors

Marking

BSR13 = U7

BSR14 = U8

ABSOLUTE MAXIMUM RATINGS

BSR13

BSR14

Collector–base voltage (open emitter)

VCB0

max.

60

75 V

Collector–emitter voltage (open base)

VCE0

max.

30

40 V

Emitter–base voltage (open collector)

VEB0

max.

5

6 V

Collector current (d.c.)

IC

max.

800

mA

Total power dissipation up to Tamb = 25 °C

Ptot

max.

250

mW

Junction temperature

Tj

max.

150

° C

D.C. current gain

IC = 150 mA; VCE = 10 V

hFE

100 to 300

IC = 500 mA; VCE = 10 V

hFE

>30

40

Transition frequency at f = 100 MHz

IC = 20 mA; VCE = 20 V

fT

>

250

300 MHz

BSR13

BSR14

Pin configuration

1 = BASE

2 = EMITTER

3 = COLLECTOR

3

2

1

SOT-23 Formed SMD Package

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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