BSR13 datasheet(2/4 Pages) CDIL

2 / 4 page

Continental Device India Limited

Data Sheet

Page 2 of 4

RATlNGS (at TA = 25°C unless otherwise specified)

Limiting values

BSR13

BSR14

Collector–base voltage (open emitter)

VCB0

max.

75 V

Collector–emitter voltage (open base)

VCE0

max.

40 V

Emitter–base voltage (open collector)

VEB0

max.

6 V

Collector current (d.c.)

max.

800

Total power dissipation

up to Tamb = 25 °C

Ptot

max.

250

Storage temperature

Tstg

–55 to +150

° C

Junction temperature

max.

150

° C

THERMAL RESISTANCE

From junction to ambient

Rth j–a =

500

K/W

CHARACTERISTICS

Tj = 25 °C unless otherwise specified

Collector cut–off current

BSR13

BSR14

IE = 0; VCB = 50 V

ICB0

<30

– nA

IE = 0; VCB = 60 V

ICB0

<–

10 nA

IE = 0; VCB = 50V; Tj = 150°C

ICB0

<10

–

µA

IE = 0; VCB = 60V; Tj = 150°C

ICB0

<–

µ A

VEB = 3 V; VCE = 60 V

ICEX

<–

10 nA

Base current

with reverse biased emitter junction

VEB = 3 V; VCE = 60 V

IBEX

<–

20 nA

Emitter cut–off current

IC = 0; VEB = 3 V

IEB0

<30

15 nA

Saturation voltages

IC = 150 mA; IB: 15 mA

VCEsat <

400

300 mV

VBEsat <

1.3

– V

VBEsat

–

0,6 to 1,2 V

IC = 500 mA; lB = 50 mA

VCEsat <

1.6

1.0 V

VBEsat <

2.6

2.0 V

D.C. current gain

IC = 0,1 mA; VCE = 10 V

hFE

>35

IC = 1 mA; VCE = 10 V

hFE

>50

IC = 10 mA; VCE = 10 V

hFE

>75

IC = 150 mA; VCE = 10 V

hFE

100 to 300

IC = 150 mA; VCE = 1 V

hFE

>50

IC = 500 mA; VCE = 10 VBSR13; R

hFE

>30

IC = 500mA; VCE = 10V BSR14; R

hFE

>40

Transition frequency at f = 100 MHz

IC = 20 mA; VCE = 20 V BSR13; R

250 MHz

IC: 20 mA; VCE = 20 V

BSR14; R

300 MHz

Collector capacitance at f = 1 MHz

IE = Ie = 0; VCB = 10 V

8 pF

Small signal current gain

IC = 1 mA; VCE = 10 V; f = 1 KHz; BSR14 hfe

50 to 300

IC = 10 mA; VCE = 10 V; f = 1 KHz; BSR13 hfe

75 to 375

BSR13

BSR14

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