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IXTP200N075T датащи(PDF) 2 Page - IXYS Corporation |
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IXTP200N075T датащи(HTML) 2 Page - IXYS Corporation |
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2 / 5 page ![]() IXYS reserves the right to change limits, test conditions, and dimensions. IXTA200N075T IXTP200N075T Symbol Test Conditions Characteristic Values (T J = 25° C unless otherwise specified) Min. Typ. Max. g fs V DS= 10 V; ID = 60 A, Note 1 70 115 S C iss 6800 pF C oss V GS = 0 V, VDS = 25 V, f = 1 MHz 1040 pF C rss 190 pF t d(on) Resistive Switching Times 31 ns t r V GS = 10 V, VDS = 0.5 VDSS, ID = 25 A 57 ns t d(off) R G = 5 Ω (External) 54 ns t f 52 ns Q g(on) 160 nC Q gs V GS= 10 V, VDS = 0.5 VDSS, ID = 25 A 35 nC Q gd 43 nC R thJC 0.35 °C/W R thCH TO-220 0.50 °C/W Source-Drain Diode Symbol Test Conditions Characteristic Values T J = 25° C unless otherwise specified) Min. Typ. Max. I S V GS = 0 V 200 A I SM Pulse width limited by T JM 540 A V SD I F = 25 A, VGS = 0 V, Note 1 1.0 V t rr I F = 25 A, -di/dt = 100 A/µs80 ns V R = 25 V, VGS = 0 V Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %; 2. On through-hole packages, R DS(on) Kelvin test contact location must be 5 mm or less from the package body. Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 A1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 7.11 8.13 .280 .320 E 9.65 10.29 .380 .405 E1 6.86 8.13 .270 .320 e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.38 0 .015 R 0.46 0.74 .018 .029 TO-263 (IXTA) Outline Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain TO-220 (IXTP) Outline PRELIMINARYTECHNICALINFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre- production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537 |
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