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IXTP200N075T датащи(PDF) 2 Page - IXYS Corporation

номер детали IXTP200N075T
подробное описание детали  TrenchMV Power MOSFET
PDF  5 Pages
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производитель  IXYS [IXYS Corporation]
домашняя страница  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTP200N075T датащи(HTML) 2 Page - IXYS Corporation

  IXTP200N075T Datasheet HTML 1Page - IXYS Corporation IXTP200N075T Datasheet HTML 2Page - IXYS Corporation IXTP200N075T Datasheet HTML 3Page - IXYS Corporation IXTP200N075T Datasheet HTML 4Page - IXYS Corporation IXTP200N075T Datasheet HTML 5Page - IXYS Corporation  
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA200N075T
IXTP200N075T
Symbol
Test Conditions
Characteristic Values
(T
J = 25° C unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS= 10 V; ID = 60 A, Note 1
70
115
S
C
iss
6800
pF
C
oss
V
GS = 0 V, VDS = 25 V, f = 1 MHz
1040
pF
C
rss
190
pF
t
d(on)
Resistive Switching Times
31
ns
t
r
V
GS = 10 V, VDS = 0.5 VDSS, ID = 25 A
57
ns
t
d(off)
R
G = 5 Ω (External)
54
ns
t
f
52
ns
Q
g(on)
160
nC
Q
gs
V
GS= 10 V, VDS = 0.5 VDSS, ID = 25 A
35
nC
Q
gd
43
nC
R
thJC
0.35
°C/W
R
thCH
TO-220
0.50
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
T
J = 25° C unless otherwise specified)
Min.
Typ.
Max.
I
S
V
GS = 0 V
200
A
I
SM
Pulse width limited by T
JM
540
A
V
SD
I
F = 25 A, VGS = 0 V, Note 1
1.0
V
t
rr
I
F = 25 A, -di/dt = 100 A/µs80
ns
V
R = 25 V, VGS = 0 V
Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %;
2. On through-hole packages, R
DS(on) Kelvin test contact
location must be 5 mm or less from the package body.
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
7.11
8.13
.280
.320
E
9.65
10.29
.380
.405
E1
6.86
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.38
0
.015
R
0.46
0.74
.018
.029
TO-263 (IXTA) Outline
Pins: 1 - Gate
2 - Drain
3 - Source 4, TAB - Drain
Pins: 1 - Gate
2 - Drain
3 - Source 4, TAB - Drain
TO-220 (IXTP) Outline
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6771478 B2 7,071,537



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