IXTP200N075T datasheet(1/5 Pages) IXYS

номер детали	IXTP200N075T

подробное описание детали	TrenchMV Power MOSFET

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производитель	IXYS [IXYS Corporation]

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

° C to 175° C75

V

DGR

T

J

= 25

° C to 175° C; R

GS = 1 MΩ

75

V

GSM

Transient

± 20

V

I

D25

T

C = 25° C

200

A

I

LRMS

Lead Current Limit, RMS

75

A

I

DM

T

C = 25° C, pulse width limited by TJM

540

A

I

AR

T

C = 25° C25

A

E

AS

T

C = 25° C

750

mJ

dv/dt

I

S

≤I

DM, di/dt ≤100 A/µs, VDD ≤VDSS

3

V/ns

T

J

≤175° C, R

G = 5 Ω

P

D

T

C = 25° C

430

W

T

J

-55 ... +175

°C

T

JM

175

°C

T

stg

-55 ... +175

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 seconds

260

°C

M

d

Mounting torque (TO-220)

1.13 / 10 Nm/lb.in.

Weight

TO-220

3

g

TO-263

2.5

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25° C unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 µA75

V

GS(th)

V

DS = VGS, ID = 250 µA

2.0

4.0

V

I

GSS

V

GS = ± 20 V, VDS = 0 V

± 200

nA

I

DSS

V

DS = VDSS

5

µA

V

GS = 0 V

T

J = 150° C

250

µA

R

DS(on)

V

GS = 10 V, ID = 25 A, Notes 1, 2

4.2

5.0

m

Ω

TrenchMVTM

Power MOSFET

Preliminary Technical Information

N-Channel Enhancement Mode

Avalanche Rated

IXTA200N075T

IXTP200N075T

V

DSS

=75

V

I

D25

= 200

A

R

DS(on) ≤

≤≤≤≤ 5.0 m

Ω

DS99521 (11/06)

TO-263 (IXTA)

TO-220 (IXTP)

G

S

G

D

S

G = Gate

D = Drain

S = Source

TAB = Drain

(TAB)

Features

Ultra-low On Resistance

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

175

° C Operating Temperature

Advantages

Easy to mount

Space savings

High power density

Applications

Automotive

- Motor Drives

- 42V Power Bus

- ABS Systems

DC/DC Converters and Off-line UPS

Primary Switch for 24V and 48V

Systems

High Current Switching

Applications

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