IXTH20N50D datasheet(1/5 Pages) IXYS

номер детали	IXTH20N50D

подробное описание детали	High Voltage MOSFET

PDF	5 Pages

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производитель	IXYS [IXYS Corporation]

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Symbol

Test Conditions

Maximum Ratings

V

DSX

T

J

= 25

°C to 150°C

500

V

DGX

T

J

= 25

°C to 150°C

500

V

GS

Continuous

± 30

V

GSM

Transient

± 40

V

I

D25

T

C = 25°C

20

A

I

DM

T

C = 25°C; pulse width limited by TJM

50

A

P

D

T

C = 25°C

400

W

T

J

-55 ... + 150

°C

T

JM

150

°C

T

stg

-55 ... + 150

°C

T

L

1.6 mm (0.063 in) from case for 10 seconds

300

°C

T

ISOL

Plastic case for 10 seconds

300

°C

M

d

Mounting torque

1.13/10

Nm/lb.in.

Weight

TO-247

6

g

TO-268

4

g

Features

Normally ON Mode

International standard packages

Molding epoxies meet UL 94 V-0

flammability classification

Applications

Level shifting

Triggers

Solid State Relays

Current Regulators

Active load

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSX

V

GS = -10 V, ID = 250 mA

500

V

GS(off)

V

DS = 25 V, ID = 250 mA

-1.5

-3.5

V

I

GSS

V

GS = ± 30 VDC, VDS = 0

± 100

nA

I

DSX(off)

V

DS = VDSS

T

J = 25°C

25

μA

V

GS = -10 V

T

J = 125°C

500

μA

R

DS(on)

V

GS = 10 V, ID = 10 A

Note 1

0.33

Ω

I

D(on)

V

GS

= 0 V, V

DS= 25 V

Note 1

1.5

A

99192(01/06)

Preliminary Data Sheet

TO-247 (IXFH)

G = Gate

D

= Drain

S = Source

TAB = Drain

IXTH 20N50D

IXTT 20N50D

High Voltage

MOSFET

N-Channel

, Depletion Mode

V

DSS

=

500 V

I

D25

=20 A

R

DS(on)

= 0.33

Ω

G

D

S

(TAB)

TO-268 (IXTT)

G

S

D (TAB)

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