IXYS reserves the right to change limits, test conditions, and dimensions.

IXTH 20N50D

IXTT 20N50D

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

4.0

7.5

S

C

iss

2500

pF

C

oss

V

GS

= -10 V, V

400

pF

C

rss

100

pF

t

d(on)

35

n s

t

r

V

85

n s

t

d(off)

I

110

n s

t

f

75

n s

Q

g(on)

125

nC

Q

gs

V

GS

= 10 V, V

35

nC

Q

gd

51

nC

R

thJC

0.31

K/W

R

thCK

0.25

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

V

SD

I

0.85

1.5

V

t

rr

I

510

ns

v

Terminals:

1 - Gate

2 - Drain

3 - Source Tab - Drain

1

2

3

TO-247 AD (IXTH) Outline

Note 1: Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205

0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40

0.232

0.252

R

4.32

5.49

.170

.216

S

6.15

BSC

242

BSC

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

Terminals:

1 - Gate

2 - Drain

3 - Source Tab - Drain

TO-268 (IXTTH) Outline