PTF10021 datasheet(2/6 Pages) ERICSSON

номер детали	PTF10021

подробное описание детали	30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor

PDF	6 Pages

Scroll/Zoom	100%

производитель	ERICSSON [Ericsson]

домашняя страница	http://www.ericsson.com

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2 / 6 page

PTF 10021

Electrical Characteristics (100% Tested)

Characteristic

Conditions

Symbol

Min

Typ

Max

Units

Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA

V(BR)DSS

—

Volts

Drain-Source Leakage Current

VDS = 28 V, VGS = 0 V

IDSS

—

1.0

Gate Threshold Voltage

VDS = 10 V, ID = 75 mA

VGS(th)

3.0

—

5.0

Volts

Forward Transconductance

VDS = 10 V, ID = 3 A

gfs

—

2.2

—

Siemens

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Vdc

Gate-Source Voltage

VGS

±20

Vdc

Operating Junction Temperature

200

°C

Total Device Dissipation at

105

Watts

Above 25°C derate by

0.6

W/°C

Storage Temperature Range

TSTG

–40 to +150

°C

Thermal Resistance (TCASE = 70°C)

RqJC

1.65

°C/W

Typical Performance

1300

1400

1500

1600

1700

Frequency (MHz)

VDD = 28 V

IDQ = 360 mA

Typical POUT, Gain & Efficiency (at P-1dB)

vs. Frequency

Output Power (W)

Efficiency (%)

Gain (dB)

Broadband Test Fixture Performance

1400

1450

1500

1550

1600

Frequency (MHz)

VDD = 28 V

IDQ = 360 mA

POUT = 10 W

Gain (dB)

Return Loss (dB)

Efficiency (%)

- 5

-15

-25

-35

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