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PTF10021 датащи(PDF) 1 Page - Ericsson |
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PTF10021 датащи(HTML) 1 Page - Ericsson |
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1 / 6 page ![]() e 1 RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gain (VDD = 28 V, POUT = 10 W, IDQ = 360 mA, f = 1.5 GHz) Gps 11.0 13.0 — dB Power Output at 1 dB Compressed (VDD = 28 V, POUT = 30 W, IDQ = 360 mA, f = 1.5 GHz) P-1dB 30 — — Watts Drain Efficiency (VDD = 28 V, POUT = 30 W, IDQ = 360 mA, f = 1.5 GHz) h 45 48 — % Load Mismatch Tolerance (VDD = 28 V, POUT = 30 W(PEP), IDQ = 360 mA, f = 1.5 GHz— Y — — 10:1 — all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. • INTERNALLY MATCHED • Performance at 1.5 GHz, 28 Volts - Output Power = 30 Watts Min - Power Gain = 13 dB Typ - Efficiency = 48% Typ • Full Gold Metallization • Silicon Nitride Passivated • Excellent Thermal Stability • 100% Lot Traceability PTF 10021 30 Watts, 1.4–1.6 GHz GOLDMOS™ Field Effect Transistor 10021 A-1234569813 0 10 20 30 40 012 345 Input Power (Watts) VDD = 28 V IDQ = 360 mA f = 1.5 GHz Typical Output Power vs. Input Power Package 20237 Description The PTF 10021 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. It is rated at 30 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. |
Аналогичный номер детали - PTF10021 |
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Аналогичное описание - PTF10021 |
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