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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2N2102 датащи(PDF) 1 Page - Continental Device India Limited |
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2N2102 датащи(HTML) 1 Page - Continental Device India Limited |
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1 / 4 page  NPN SILICON PLANAR TRANSISTOR 2N2102 TO-39 Metal Can Package Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL Collector Emitter Voltage VCEO Collector Emitter Voltage, RBE < 10Ω Ω VCER Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation @ Ta=25ºC PD Derate Above 25ºC Power Dissipation @ Tc=25ºC PD Derate Above 25ºC Operating and Storage Junction Temperature Range Tj, Tstg THERMAL RESISTANCE Junction to Ambient in free air **Rth (j-a) Junction to Case Rth (j-c) ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Emitter Voltage VCER IC=1mA, RBE=10 Ω 80 V Collector Emitter Voltage VCEO IC=1mA, IB=0 65 V Collector Emitter Voltage VCEX IC=100µA, VEB=1.5V 120 V Collector Base Voltage VCBO IC=100µA, IE=0 120 V Emitter Base Voltage VEBO IE=100µA, IC=0 7 V Collector Cut Off Current ICBO VCB=60V, IE=0 2 nA VCB=60V, IE=0, Ta=150ºC 2 µA Emitter Cut Off Current IEBO VEB=5V, IC=0 2 nA DC Current Gain hFE IC=0.1mA, VCE=10V 20 *IC=10mA, VCE=10V 35 *IC=10mA, VCE=10V, Ta=55ºC 20 *IC=150mA, VCE=10V 40 120 *IC=500mA, VCE=10V 25 *IC=1A, VCE=10V 10 *Pulse Test: Pulse Width < 300 µµs, Duty Cycle < 2% **Rth (j-a) is measured with the device soldered into a typical printed circuit board 2N2102Rev_1 040904E UNIT V V V A mW mW/ ºC W 1.0 VALUE 65 120 7.0 80 V ºC/W 1.0 175 5.71 5.0 35 ºC/W 28.6 - 65 to +200 mW/ ºC ºC Continental Device India Limited Data Sheet Page 1 of 4 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
Аналогичный номер детали - 2N2102 |
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Аналогичное описание - 2N2102 |
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ссылки URL |
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