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2N2102 датащи(PDF) 2 Page - Continental Device India Limited

номер детали 2N2102
подробное описание детали  NPN SILICON PLANAR TRANSISTOR
PDF  4 Pages
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производитель  CDIL [Continental Device India Limited]
домашняя страница  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

2N2102 датащи(HTML) 2 Page - Continental Device India Limited

  2N2102 Datasheet HTML 1Page - Continental Device India Limited 2N2102 Datasheet HTML 2Page - Continental Device India Limited 2N2102 Datasheet HTML 3Page - Continental Device India Limited 2N2102 Datasheet HTML 4Page - Continental Device India Limited  
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NPN SILICON PLANAR TRANSISTOR
2N2102
TO-39
Metal Can Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Collector Emitter Saturation Voltage
*VCE (sat)
IC=150mA, IB=15mA
0.5
V
Base Emitter Saturation Voltage
*VBE (sat)
IC=150mA, IB=15mA
1.1
V
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
fT
IC=50mA, VCE=10V, f=20MHz
60
MHz
Output Capacitance
Cobo
VCB=10V, IE=0, f=1MHz
15
pF
Input Capacitance
Cibo
VEB=0.5V, IC=0, f=1MHz
80
pF
Input Impedance
hib
IC=1mA, VCE=5V, f=1KHz
24
34
Ω
IC=5mA, VCE=10V, f=1KHz
4.0
8.0
Ω
Voltage Feedback Ratio
hrb
IC=1mA, VCE=5V, f=1KHz
3.0
x10
-4
IC=5mA, VCE=10V, f=1KHz
3.0
x10
-4
Small Signal Current Gain
hfe
IC=1mA, VCE=5V, f=1KHz
30
100
IC=5mA, VCE=10V, f=1KHz
35
150
Output Impedance
hob
IC=1mA, VCE=5V, f=1KHz
0.01
0.5
µmho
IC=5mA, VCE=10V, f=1KHz
0.01
1.0
µmho
Noise Figure
NF
IC=300µA, VCE=10V,
f=1KHz,Bandwidth=1.0 Hz
RS=1kΩ
6.0
dB
2N2102Rev_1 040904E
Continental Device India Limited
Data Sheet
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