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2SC5337 датащи(PDF) 1 Page - California Eastern Labs

номер детали 2SC5337
подробное описание детали  NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
PDF  6 Pages
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производитель  CEL [California Eastern Labs]
домашняя страница  http://www.cel.com
Logo CEL - California Eastern Labs

2SC5337 датащи(HTML) 1 Page - California Eastern Labs

  2SC5337 Datasheet HTML 1Page - California Eastern Labs 2SC5337 Datasheet HTML 2Page - California Eastern Labs 2SC5337 Datasheet HTML 3Page - California Eastern Labs 2SC5337 Datasheet HTML 4Page - California Eastern Labs 2SC5337 Datasheet HTML 5Page - California Eastern Labs 2SC5337 Datasheet HTML 6Page - California Eastern Labs  
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Sep 14, 2012
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
Preliminary
Data Sheet
2SC5337
NPN Silicon RF Transistor for High-Frequency
Low Distortion Amplifier 4-Pin Power Minimold
FEATURES
• Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA
• Low noise
NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz
NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz
• 4-pin power minimold package with improved gain from the 2SC4536
ORDERING INFORMATION
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2SC5337-T1
2SC5337-T1-AZ
4-pin power
minimold
(Pb-Free) Note
1 kpcs/reel
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
Note Contains Lead in the part except the electrode terminals.
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCEO
15
V
Emitter to Base Voltage
VEBO
3.0
V
I
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C
250
mA
Total Power Dissipation
Ptot Note
2.0
W
Junction Temperature
Tj
150
°
C
Storage Temperature
Tstg
65 to +150
°
C
Note Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate (Copper plating)
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0047EJ0300
Rev.3.00
Sep 14, 2012
<R>
A Business Partner of Renesas Electronics Corporation.


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