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2SC5337 датащи(PDF) 3 Page - California Eastern Labs

номер детали 2SC5337
подробное описание детали  NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
PDF  6 Pages
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производитель  CEL [California Eastern Labs]
домашняя страница  http://www.cel.com
Logo CEL - California Eastern Labs

2SC5337 датащи(HTML) 3 Page - California Eastern Labs

  2SC5337 Datasheet HTML 1Page - California Eastern Labs 2SC5337 Datasheet HTML 2Page - California Eastern Labs 2SC5337 Datasheet HTML 3Page - California Eastern Labs 2SC5337 Datasheet HTML 4Page - California Eastern Labs 2SC5337 Datasheet HTML 5Page - California Eastern Labs 2SC5337 Datasheet HTML 6Page - California Eastern Labs  
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2SC5337
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P
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Sep 14, 2012
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
Mounted on Ceramic Substrate
(16 cm2 × 0.7 mm (t) )
2.0
1.0
0
50
100
150
Ambient Temperature TA (˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
VCE = 10 V
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
300
100
50
10
100
0.1
1
10
1 000
f = 1 MHz
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
5.0
2.0
3.0
0.3
1.0
0.5
1
3
5
10
20 30
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
2
3
5
0.3
0.5
1
70 100
10
30
50
VCE = 10 V
f = 1 GHz
VCE = 10 V
f = 1 GHz
Collector Current IC (mA)
vs. COLLECTOR CURRENT
INSERTION POWER GAIN
10
5
0
10
30
50 70 100
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
80
100
20
40
60
0
10
20
IB = 0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
Remark The graphs indicate nominal characteristics.
A Business Partner of Renesas Electronics Corporation.



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