SSD12P10 datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSD12P10

-12A , -100V , RDS(ON) 210mΩ

P-Channel Enhancement MOSFET

16-Nov-2012 Rev. C

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Drain-Source Breakdown Voltage

BVDSS

-100

VGS=0, ID= -250μA

Breakdown Voltage Temperature Coefficient △BVDSS /△TJ

-0.096

V/°C

Reference to 25°C,

ID= -1mA

Gate-Threshold Voltage

VGS(th)

-1

-2.5

VDS=VGS, ID= -250μA

Forward Transconductance

gfs

VDS= -10V, ID= -8A

Gate-Source Leakage Current

IGSS

±100

VGS= ±32V

Drain-Source Leakage Current (TJ =25°C)

-1

VDS= -100V, VGS =0

Drain-Source Leakage Current(TJ=150°C)

IDSS

-25

μA

VDS= -80V, VGS =0

210

VGS= -10V, ID= -8A

Static Drain-Source On-Resistance

RDS(ON)

250

mΩ

VGS= -4.5V, ID= -6A

Total Gate Charge

Gate-Source Charge

Qgs

4.4

Gate-Drain (“Miller”) Change

Qgd

8.7

ID= -8A

VDS= -80V

VGS= -4.5V

Turn-on Delay Time

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDS= -50V

ID= -8A

VGS= -10V

RG=3.3Ω

RD=6.25Ω

Input Capacitance

Ciss

1590

Output Capacitance

Coss

110

Reverse Transfer Capacitance

Crss

VGS =0

VDS= -25V

f =1.0MHz

Gate Resistance

Ω

f=1.0MHz

Source-Drain Diode

Forward On Voltage

VSD

-1.3

IS= -12A, VGS=0

Continuous Source Current(Body Diode)

-12

Pulsed Source Current(Body Diode)

ISM

-48

VD=VG=0V, VS =1.3V

Notes:

1. Pulse width limited by safe operating area.

2. Pulse width ≦300us, duty cycle≦2%.

SSD12P10 датащи(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

SSD12P10 датащи(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

Html Pages

1 2 3 4

датащи скачать

ссылки URL