SSD12P10 datasheet(1/4 Pages) SECOS

номер детали	SSD12P10

подробное описание детали	P-Channel Enhancement MOSFET

PDF	4 Pages

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производитель	SECOS [SeCoS Halbleitertechnologie GmbH]

домашняя страница	http://www.secosgmbh.com

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1 / 4 page

Elektronische Bauelemente

SSD12P10

-12A , -100V , RDS(ON) 210mΩ

P-Channel Enhancement MOSFET

16-Nov-2012 Rev. C

Page 1 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

A

C

D

N

O

P

G E

F

H

K

J

M

B

TO-252(D-Pack)

12P10



RoHS Compliant Product

A suffix of “-C” specifies halogen free

DESCRIPTION

The SSD12P10 provide the designer with the best combination

of fast switching, ruggedized device design, low on-resistance

and cost-effectiveness.

The TO-252 package is universally preferred for all

commercial-industrial surface mount applications.

FEATURES



Simple Drive Requirement



Lower On-resistance



Fast Switching Characteristic



RoHS Compliant

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

TO-252

2.5K

13 inch

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

-100

V

Gate-Source Voltage

VGS

±20

V

TC=25°C

-12

A

Continuous Drain Current @VGS=10V

TC=100°C

ID

-10

A

Pulsed Drain Current

1

IDM

-48

A

Total Power Dissipation

TC=25°C

PD

35.7

W

Operating Junction and Storage Temperature Range

TJ, TSTG

-55~150

°C

Thermal Resistance Rating

Maximum Thermal Resistance Junction- case

RθJC

3.5

°C / W

Maximum Thermal Resistance Junction-ambient

RθJA

110

°C / W

Date Code

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.35

6.80

J

2.30 REF.

B

5.20

5.50

K

0.64

0.90

C

2.15

2.40

M

0.50

1.1

D

0.45

0.58

N

0.9

1.65

E

6.8

7.5

O

0

0.15

F

2.40

3.0

P

0.43

0.58

G

5.40

6.25

H

0.64

1.20



Gate



Source



Drain

Аналогичный номер детали - SSD12P10

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Аналогичный номер детали - SSD12P10

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