NE33284AS datasheet(1/5 Pages) CEL

номер детали	NE33284AS

подробное описание детали	SUPER LOW NOISE HJ FET

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производитель	CEL [California Eastern Labs]

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NE33284A

FEATURES

• VERY LOW NOISE FIGURE:

0.8 dB typical at 12 GHz

• HIGH ASSOCIATED GAIN:

10.5 dB Typical at 12 GHz

• GATE LENGTH: 0.3

µm

• GATE WIDTH: 280

µm

• LOW COST METAL/CERAMIC PACKAGE

• TAPE & REEL PACKAGING OPTION AVAILABLE

PART NUMBER

NE33284A

PACKAGE OUTLINE

84AS

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

NFOPT1

Optimum Noise Figure, VDS = 2.0 V, IDS = 10 mA,

f = 12 GHz

dB

0.75

1.0

f = 4 GHz

dB

0.35

0.45

GA1

Associated Gain, VDS = 2.0 V, IDS = 10 mA, f = 12 GHz

dB

9.5

10.5

f = 4 GHz

dB

13.0

15.0

P1dB

Output Power at 1 dB Gain Compression Point, f = 12 GHz

VDS = 2.0 V, IDS = 10 mA

dBm

11.2

VDS = 2.0 V, IDS = 20 mA

dBm

12.0

G1dB

Gain at P1dB, f = 12 GHz

VDS = 2.0 V, IDS = 10 mA

dB

10.8

VDS = 2.0 V, IDS = 20 mA

dB

11.0

IDSS

Saturated Drain Current, VDS = 2.0 V,VGS = 0 V

mA

15

40

80

VP

Pinch-off Voltage, VDS = 2.0 V, IDS = 0.1 mA

V

-2.0

-0.8

-0.2

gm

Transconductance, VDS = 2.0 V, ID = 10 mA

mS

45

70

IGSO

Gate to Source Leakage Current, VGS = -3.0 V

µA

0.5

10.0

RTH (CH-A)

Thermal Resistance (Channel to Ambient)

°C/W

630

RTH (CH-C)2

Thermal Resistance (Channel to Case)

°C/W

280

310

ELECTRICAL CHARACTERISTICS (TA = 25°C)

DESCRIPTION

The NE33284A is a Hetero-Junction FET that uses the junction

between Si-doped AlGaAs and undoped InGaAs to create very

high mobility electrons. The device features mushroom shaped

TiAl gates for decreased gate resistance and improved power

handling capabilities. The mushroom gate also results in lower

noise figure and high associated gain. This device is housed in

an epoxy-sealed, metal/ceramic package and is intended for

high volume consumer and industrial applications.

Notes:

1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually

measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line

as a "go-no-go" screening tuned for the "generic" type but not for each specimen.

2. RTH (channel to case) for package mounted on an infinite heat sink.

NOISE FIGURE & ASSOCIATED

GAIN vs. FREQUENCY

VDS = 2 V, IDS = 10 mA

Frequency, f (GHz)

SUPER LOW NOISE HJ FET

California Eastern Laboratories

1

10

20

0

0.2

0.4

0.6

0.8

1.2

1.4

NF

GA

24

21

18

15

12

9

6

3

1

Аналогичный номер детали - NE33284AS

производитель	номер детали	датащи	подробное описание детали
NEC	NE33284AS	53Kb / 5P	SUPER LOW NOISE HJ FET

More results

Аналогичное описание - NE33284AS

производитель	номер детали	датащи	подробное описание детали
NEC	NE33200N	85Kb / 7P	SUPER LOW NOISE HJ FET
	NE334S01	46Kb / 6P	C BAND SUPER LOW NOISE HJ FET
	NE434S01	41Kb / 5P	C BAND SUPER LOW NOISE HJ FET
California Eastern Labs	NE3210S01	414Kb / 7P	SUPER LOW NOISE HJ FET
California Eastern Labs	NE4210S01	252Kb / 7P	SUPER LOW NOISE HJ FET
NEC	NE33284A	53Kb / 5P	SUPER LOW NOISE HJ FET
California Eastern Labs	NE334S01	46Kb / 6P	C BAND SUPER LOW NOISE HJ FET
	NE33200	87Kb / 7P	SUPER LOW NOISE HJ FET
	NE23300	58Kb / 5P	SUPER LOW NOISE HJ FET
	NE434S01	42Kb / 5P	C BAND SUPER LOW NOISE HJ FET

More results

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