NE33284AS datasheet(2/5 Pages) CEL

2 / 5 page

TRANSCONDUCTANCE vs. DRAIN CURRENT

VDS = 2.0 V

ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)

SYMBOLS

PARAMETERS

UNITS

RATINGS

VDS

Drain to Source Voltage

4.0

VGS

Gate to Source Voltage

-3.0

IDS

Drain Current

IDSS

IGRF

Gate Current

µA

280

RF Input (CW)

dBm

TCH

Channel Temperature

°C

150

TSTG

Storage Temperature

°C

-65 to +150

Total Power Dissipation

165

TYPICAL PERFORMANCE CURVES (TA = 25°C)

Note:

1.Operation in excess of any one of these conditions may result in

permanent damage.

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

Ambient Temperature, TA (

°C)

Drain Current, IDS (mA)

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

Drain to Source Voltage, VDS (V)

Drain Current, IDS (mA)

TYPICAL NOISE PARAMETERS (TA = 25°C)

VDS = 2 V, IDS = 10 mA

FREQ.

NFOPT

ΓOPT

(GHz)

(dB)

MAG

ANG

Rn/50

0.29

21.3

0.85

0.48

0.31

18.3

0.82

0.27

0.35

15.0

0.74

0.16

0.42

13.5

0.67

0.13

0.52

12.2

0.59

107

0.10

0.63

11.3

0.52

130

0.09

0.75

10.5

0.45

168

0.10

0.90

9.9

0.37

-146

0.14

1.05

9.3

0.30

-100

0.22

1.25

8.8

0.22

-54

0.34

NOISE FIGURE AND GAIN

vs. DRAIN CURRENT

VDS = 2 V, f = 12 GHz

NE33284A

Infinite

Heat sink

100

125

150

175

200

300

250

200

150

100

Free Air

120

100

304050

0.5

-0.1 V

-0.2 V

-0.3 V

-0.4 V

-0.5 V

1.5

2.5

VGS = 0 V

1.6

1.2

0.8

0.4

Tuned @ 10 mA only

Tuned @ each IDS

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