PRELIMINARY DATA SHEET

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P14658EJ2V0DS00 (2nd edition)

Date Published April 2000 NS CP(K)

Printed in Japan

NPN SILICON RF TRANSISTOR

2SC5606

NPN SILICON RF TRANSISTOR FOR

LOW NOISE · HIGH-GAIN AMPLIFICATION

3-PIN ULTRA SUPER MINIMOLD

©

1999, 2000

The mark

•

•

•

• shows major revised points.

FEATURES

• Suitable for high-frequency oscillation

• 3-pin ultra super minimold

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5606

50 pcs (Non reel)

• 8 mm wide embossed taping

2SC5606-T1

3 kpcs/reel

• Pin 3 (collector) face the perforation side of the tape

Remark To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs).

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

15

V

Collector to Emitter Voltage

3.3

V

Emitter to Base Voltage

1.5

V

Collector Current

35

mA

Total Power Dissipation

Note

115

mW

Junction Temperature

150

°C

Storage Temperature

−65 to +150

°C

Note Mounted on 1.08 cm

2

× 1.0 mm (t) glass epoxy substrate

Because this product uses high-frequency technology, avoid excessive static electricity, etc.