NE66219 датащи(PDF) - California Eastern Labs

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NE66219 датащи (PDF) - California Eastern Labs

NE66219 Datasheet PDF - California Eastern Labs


номер детали	NE66219

скачать	NE66219 скачать

объем файла	329.12 Kbytes

Page	6 Pages

производитель	CEL [California Eastern Labs]

домашняя страница	http://www.cel.com

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подробное описание детали

NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

NE66219 Datasheet (PDF)

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скачать датащи

NE66219 Datasheet PDF - California Eastern Labs


номер детали	NE66219

скачать	NE66219 Click to download

объем файла	329.12 Kbytes

Page	6 Pages

производитель	CEL [California Eastern Labs]

домашняя страница	http://www.cel.com

Logo

подробное описание детали	NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

NE66219 датащи (HTML) - California Eastern Labs

NE66219 Информация о продукте

FEATURES
• Suitable for high-frequency oscillation
• fT = 25 GHz technology adopted
• 3-pin ultra super minimold (19, 1608 PKG) package

Аналогичный номер детали - NE66219

производитель	номер детали	датащи	подробное описание детали
Renesas Technology Corp	NE662M03	229Kb / 12P	NPN SILICON RF TRANSISTOR 2003
Renesas Technology Corp	NE662M03-T1	229Kb / 12P	NPN SILICON RF TRANSISTOR 2003
NEC	NE662M04	93Kb / 10P	NPN SILICON HIGH FREQUENCY TRANSISTOR
California Eastern Labs	NE662M04	420Kb / 11P	NPN SILICON HIGH FREQUENCY TRANSISTOR
NEC	NE662M04-T2	93Kb / 10P	NPN SILICON HIGH FREQUENCY TRANSISTOR

Аналогичное описание - NE66219

производитель	номер детали	датащи	подробное описание детали
NEC	2SC5606	68Kb / 6P	NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD
	NESG2021M16	120Kb / 12P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
	NESG2031M16	119Kb / 12P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
	NESG4030M14	112Kb / 10P	NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)
	2SC5606	73Kb / 7P	NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
Renesas Technology Corp	2SC4226-T1-A	149Kb / 8P	NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold
California Eastern Labs	NESG2021M16	861Kb / 11P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
California Eastern Labs	NESG210719	1Mb / 9P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
Renesas Technology Corp	2SC4227	202Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD
Renesas Technology Corp	2SC4228	202Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD

О California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Эта информация предназначена только для общих информационных целей, мы не несем ответственности за любые убытки или ущерб, вызванные вышеуказанной информацией.

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